near-IR原理

a r X i v :0707.2093v 2 [a s t r o -p h ] 17 D e c 2007Accepted in ApJ,2007December 2

Preprint typeset using L A T E X style emulateapj v.10/09/06

X-RAY AND NEAR-IR VARIABILITY OF THE ANOMALOUS X-RAY PULSAR 1E 1048.1?5937:FROM QUIESCENCE BACK TO ACTIVITY

Cindy R.Tam,1Fotis P.Gavriil,2,3Rim Dib,1Victoria M.Kaspi,1,4Peter M.Woods,

5,6Cees Bassa,1

Accepted in ApJ,2007December 2ABSTRACT We report on new and archival X-ray and near-infrared (near-IR)observations of the anomalous X-ray pulsar 1E 1048.1?5937performed between 2001-20

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IR Experiments with LemurNancy McCracken October 21, 2004 Adapted from a presentation in IST 657 Lemur assistance: Shuyuan Mary Ho IR model slides: Liz Liddy and Anne Diekema Example experiment: Sijo Cherian

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Outline Overview of Lemur project goals and capabilities Standard IR experiments made possible by TREC Steps for IR using Lemur–––– Document preparation and indexing Query preparations Retrieval using several models Other applications

Evaluation for TREC exper

Features

?Fully operational to +600V

dV/dt immune

????????

Also available LEAD-FREE (PbF)

e1b9bf2233687e21ae45a95e 1

IR2183(4)(S ) & (PbF )

Data Sheet No. PD60173 rev.H

Description

The IR2183(4)(S) are high voltage,

high speed power MOSFET and IGBT drivers with dependent high and low

side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V

logic. The output drivers feature a high pulse

IR2110驱动MOS IGBT组成H桥原理与驱动电路分析

3.3 电机驱动模块设计 3.3.1 H桥工作原理及驱动分析

要控制电机的正反转，需要给电机提供正反向电压，这就需要四路开关去控制电机两个输入端的电压。H桥驱动原理等效原理图图如图3-5所示，当开关S1和S3闭合时，电流从电机左端流向电机的右端，设此时的旋转方向为正向；当开关S2和S4闭合时，电流从电机右端流向电机左端，电机沿反方向旋转。 S1S4MotorS2S3GNDM 图3-5 H桥驱动原理等效电路图 常用可以作为H桥的电子开关器件有继电器，三极管，MOS管，IGBT管等。普通继电器属机械器件，开关次数有限，开关频率上限一般在30HZ左右，而且继电器内部为感性负载，对电路的干扰比较大，但继电器可以把控制部分与被控制部分分开，实现由小信号控制大信号，所以高压控制中一般会用到继电器。三极管属于电流驱动型器件，设基极电流为IB，集电极电流为IC，三极管的放大系数为β，电源电压VCC，集电极偏置电阻RC ，如果IB*β>=IC, 则三极管处于饱和状态，可以当作开关使用，集电极饱和电流IC =VCC/RC ，由此可见集电极的输出电流受到RC的限制，不适合应用于电流要求较高的场合。MOS管

IR2110驱动MOS IGBT组成H桥原理与驱动电路分析

3.3 电机驱动模块设计 3.3.1 H桥工作原理及驱动分析

要控制电机的正反转，需要给电机提供正反向电压，这就需要四路开关去控制电机两个输入端的电压。H桥驱动原理等效原理图图如图3-5所示，当开关S1和S3闭合时，电流从电机左端流向电机的右端，设此时的旋转方向为正向；当开关S2和S4闭合时，电流从电机右端流向电机左端，电机沿反方向旋转。 S1S4MotorS2S3GNDM 图3-5 H桥驱动原理等效电路图 常用可以作为H桥的电子开关器件有继电器，三极管，MOS管，IGBT管等。普通继电器属机械器件，开关次数有限，开关频率上限一般在30HZ左右，而且继电器内部为感性负载，对电路的干扰比较大，但继电器可以把控制部分与被控制部分分开，实现由小信号控制大信号，所以高压控制中一般会用到继电器。三极管属于电流驱动型器件，设基极电流为IB，集电极电流为IC，三极管的放大系数为β，电源电压VCC，集电极偏置电阻RC ，如果IB*β>=IC, 则三极管处于饱和状态，可以当作开关使用，集电极饱和电流IC =VCC/RC ，由此可见集电极的输出电流受到RC的限制，不适合应用于电流要求较高的场合。MOS管

Unit 8 Is there a post office near here?

Section B 2 (2a-3b)

Ⅰ. The teaching aims:

1. To master the important words and expressions of this part. Be able to use them properly and flexibly.

2. To improve the abilities of getting information and the abilities of listening, speaking, reading and writing.

3. To learn the ways of asking and giving directions. Try your best to help others

sincerely.

Ⅱ. The teaching emphasis & difficulties:

1. the ability of general reading and acquiring information

2. the cultivation of communicative abil

驱动芯片IR2110功能简介

驱动芯片IR2110功能简介

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在功率变换装置中，根据主电路的结构，起功率开关器件一般采用直接驱动和隔离驱动两种方式.美国IR公司生产的IR2110驱动器，兼有光耦隔离和电磁隔离的优点，是中小功率变换装置中驱动器件的首选。

IR2110引脚功能及特点简介

内部功能如图4.18所示:

LO（引脚1）:低端输出

COM（引脚2）:公共端

Vcc（引脚3）:低端固定电源电压

Nc（引脚4）: 空端

Vs（引脚5）:高端浮置电源偏移电压

VB (引脚6):高端浮置电源电压

HO（引脚7）:高端输出

Nc（引脚8）: 空端

VDD（引脚9）:逻辑电源电压

HIN（引脚10）: 逻辑高端输入

SD（引脚11）:关断

LIN（引脚12）:逻辑低端输入

Vss（引脚13）:逻辑电路地电位端，其值可以为0V

Nc（引脚14）:空端

驱动芯片IR2110功能简介

IR2110的特点：

（1）具有独立的低端和高端输入通道。

（2）悬浮电源采用自举电路，其高端工作电压可达500V。

（3）输出的电源端（脚3）的电压范围为10—20V。

（4）逻辑电源的输入范围（脚9）5—15V，可方便的与TTL，CMOS电平相匹配，而且逻辑电源地和功率电源地之间允许有 V的便移

Phosphorescent Complexes DOI:10.1002/anie.201410437 Near-IR Phosphorescent Ruthenium(II)and Iridium(III)Perylene Bisimide Metal Complexes**

Marcus Schulze,Andreas Steffen,*and Frank Würthner*

Abstract:The phosphorescence emission of perylene bisimide derivatives has been rarely reported.Two novel ruthenium(II) and iridium(III)complexes of an azabenz-annulated perylene bisimide(ab-PBI),[Ru(bpy)2(ab-PBI)][PF6]21and[Cp*Ir-(ab-PBI)Cl]PF62are now presented that both show NIR phosphorescence between750–1000nm in solution at room te

The Landau-Ginzburg-Wilson paradigm for critical phenomena is spectacularly successful whenever the critical temperature is finite and all fluctuation modes, with characteristic energies much smaller than the thermal energy, obey classical statistics. In z

Anomalouscriticalbehaviornearthequantumcriticalpointofahole-dopedLa2CuO4

Y.Chen,1WeiBao,1J.E.Lorenzo,2A.Stunault,3J.L.Sarrao,1S.Park,4,5,6andY.Qiu4,5

LosAlamosNationalLaboratory,LosAlamos,NM87545

2

CNRS,BP166X,F-38043,Grenoble,France

3

InstitutLaue-Langevin,BP156,F-38042,Grenobl

Glassy behavior is a generic feature of electrons close to disorder-driven metal-insulator transitions. Deep in the insulating phase, electrons are tightly bound to impurities, and thus classical models for electron glasses have long been used. As the meta

Quantum uctuationsandglassybehaviorofelectronsnear

metal-insulatortransitions

arXiv:cond-mat/0403594v1 [cond-mat.str-el] 23 Mar 2004V.Dobrosavljevi´cDepartmentofPhysicsandNationalHighMagneticFieldLaboratory,FloridaStateUniversity,Tallahassee,FL32306,USAABSTRACTGlassyb