MPR121中文数据手册

Freescale SemiconductorTechnical Data

MPR121Rev 0, 9/2009

Advanced Information

Proximity Capacitive TouchSensor Controller

MPR121 OVERVIEW

The MPR121 is the second generation sensor controller after the initialrelease of the MPR03x series devices. The MPR121 will featureincreased internal intelligence in addition to Freescale’s second

generation capacitance detection engine. Some of the major additions

2Cinclude an increased electrode count, a hardware configurable I

address, an expanded filtering system with debounce, and completelyindependent electrodes with auto-configuration built in. The device alsofeatures a 13thsimulated electrode that represents the simultaneouscharging of all the electrodes connected together to allow for increasedproximity detection in a touch panel or touch screen array.Features??????????

1.71 V to 3.6 V operation

29mAsupply current at 16 ms sample period3mAshutdown current12 electrodes

Continuous independent auto-calibration for each electrode inputSeparate touch and release trip thresholds for each electrode,providing hysteresis and electrode independence

I2C interface, with IRQ output to advise electrode status changes3 mm x 3 mm x 0.65 mm 20 lead QFN packageLED driver functionality with 8 shared LEDs-40°C to +85°C operating temperature range

IRQSCLSDAADDRVREG

12345

MPR121

Capacitive TouchSensor Controller

Bottom View

20-PIN QFNCASE 2059-01

Top View

DD

ELE11ELE10

ELE9ELE8

V

20 19 18 17 16

1514131211

6

SS

ELE7ELE6ELE5ELE4ELE3

Implementations??

Switch ReplacementsTouch Pads

78910

REXTELE0ELE1ELE2

V

Typical Applications?

????

PC PeripheralsMP3 PlayersRemote ControlsMobile PhonesLighting Controls

ORDERING INFORMATION

Device NameMPR121QR2

Temperature Range-40°C to +85°C

Case Number2059 (20-Pin QFN)

Touch Pads12-pads

IRC Address0x4C - 0x4F

ShippingTape & Reel

Pin Connections

This document contains a product under development. Freescale Semiconductor reserves the right to change ordiscontinue this product without notice.

? Freescale Semiconductor, Inc., 2009. All rights reserved.

简图和实施

VDD1.71 V至2.75 V

VDD1.71 V至2.75 V0.1μF

206512347

VDDVSSVREGIRQSCLSDAADDRREXT

ELE11/LED7ELE10/LED6ELE9/LED5ELE8/LED4ELE7/LED3ELE6/LED2ELE5/LED1ELE4/LED0

ELE3

1918171615141312111098

75 k 1%

GND

GND

MPR121Q触摸传感器

ELE2ELE1ELE0

图1.配置1：MPR121运行从1.71 V至2.75 V电源供电.

VDD2.5 V至3.6 V

VDD2.5 V至3.6 V0.1μF

206512347

VDDVSSVREGIRQSCLSDAADDRREXT

ELE11/LED7ELE10/LED6ELE9/LED5ELE8/LED4ELE7/LED3ELE6/LED2ELE5/LED1ELE4/LED0

ELE3

1918171615141312111098

0.1μF

75 k 1%

GND

GND

GND

MPR121Q触摸传感器

ELE2ELE1ELE0

图2.配置2：MPR121运行从2.5 V至3.6 V电源供电.

电容感应

MPR121使用一个恒定的电流触摸传感器系统的控制有两种主要类型.它可以测量通过改变供给到各电极的电流和时间的量的范围从10pF到2000 pF的电容.电极独立控制允许在电极图案设计了很大的灵活性.为了使设备更容易的设置,自动配置系统可以用来设置了理想的各电极的电容.对于如何成立这个系统的信息,请参阅应用笔记AN3889.

一旦电容的计算,它贯穿了几个数字滤波允许在不同的环境中没有良好的噪声抑制水平的牺牲响应时间或功耗. MPR121可以被配置为1毫秒和128毫秒之间的采样率.对于如何成立这个系统的信息,请参阅应用笔记AN3890.

MPR1212

传感器

飞思卡尔半导体（FreescaleSemiconductor）

触摸感应一旦决定在任何给定时刻的电容,此信息必须被翻译成智能触摸识别. MPR121有一对夫妇MPR03x系列器件比前一代系统有所改善.一个基线跟踪系统,使系统能够跟踪系统中的非接触电容.对于如何建立基线电容系统的信息,请参阅应用笔记AN3891.基准值进行比较的电流值,以确定是否已发生的触摸.设计师有能力的上升和下降阈值设置,除了一个去抖消除由于噪声引起的抖动和误触摸.这些元素被描述在应用笔记AN3892.接近传感一项新功能的MPR121接近感应系统,使系统的电极,可缩短使用一起内部,创建一个大的电极.这种电极的电容是较大的和预计的电容可以th“电极将被包含在一个正常的检测周期的末尾,将有自己的被测量.当启用时,这个“13独立设置的配置寄存器.此系统被描述在应用笔记AN3893.LED驱动器MPR121包括8个共享的LED驱动销.当这些引脚不作为电极的配置,它们可以被用于驱动LED.该系统可以为上拉和下拉LED配置,以及作为通用GPIO推/拉功能.应用笔记AN3894中描述的结构的LED驱动器系统.串行通信2C）兼容的设备被触发额外的中断,随时触摸或iMPR121是一间集成电路（2C类地址由ADDR引脚连接到VDD,VSS,SDA一个按钮的释放被检测到.该器件具有一个可配置的I2C类地址是0x4C,0x4D,0x4E,0x4F.该系统的具体细节是i或SCL线.由此产生的在AN3895.仅供参考MPR121的寄存器映射表1中.MPR1213传感器飞思卡尔半导体（FreescaleSemiconductor）表1中.寄存器映射

REGISTER

Fields

RegisterAddress

ELE3ELE11

ELE5

ELE4ELEPROX

EFD0LB

EFD0HB

EFD1LB

EFD1HB

EFD2LB

EFD2HB

EFD3LB

EFD3HB

EFD4LB

EFD4HB

EFD5LB

EFD5HB

EFD6LB

EFD6HB

EFD7LB

EFD7HB

EFD8LB

EFD8HB

EFD9LB

EFD9HB

EFD10LB

EFD10HB

EFD11LB

EFD11HB

EFDPROXLB

EFDPROXHB

E0BVE1BVE2BVE3BVE4BVE5BVE6BVE7BVE8BVE9BVE10BVE11BVEPROXBV

MHDRNHDR

NCLRFDLR

MHDFNHDF

ELE3ELE11

ELE2ELE10ELE2ELE10

ELE1ELE9ELE1ELE9

ELE0ELE8ELE0ELE8

0x000x010x020x030x040x050x060x070x080x090x0A0x0B0x0C0x0D0x0E0x0F0x100x110x120x130x140x150x160x170x180x190x1A0x1B0x1C0x1D0x1E0x1F0x200x210x220x230x240x250x260x270x280x290x2A0x2B0x2C0x2D0x2E0x2F0x30

InitialValue0x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x00

RegisterAddress + 1AutoIncrementAddress

ELE0 - ELE7 Touch Status

ELE8 - ELE11, ELEPROX Touch StatusELE0-7 OOR Status

ELE8-11, ELEPROX OOR StatusELE0 Electrode Filtered Data LSBELE0 Electrode Filtered Data MSBELE1 Electrode Filtered Data LSBELE1 Electrode Filtered Data MSBELE2 Electrode Filtered Data LSBELE2 Electrode Filtered Data MSBELE3 Electrode Filtered Data LSBELE3 Electrode Filtered Data MSBELE4 Electrode Filtered Data LSBELE4 Electrode Filtered Data MSBELE5 Electrode Filtered Data LSBELE5 Electrode Filtered Data MSBELE6 Electrode Filtered Data LSBELE6 Electrode Filtered Data MSBELE7 Electrode Filtered Data LSBELE7 Electrode Filtered Data MSBELE8 Electrode Filtered Data LSBELE8 Electrode Filtered Data MSBELE9 Electrode Filtered Data LSBELE9 Electrode Filtered Data MSBELE10 Electrode Filtered Data LSBELE10 Electrode Filtered Data MSBELE11 Electrode Filtered Data LSBELE11 Electrode Filtered Data MSBELEPROX Electrode Filtered Data LSBELEPROX Electrode Filtered Data MSBELE0 Baseline ValueELE1 Baseline ValueELE2 Baseline ValueELE3 Baseline ValueELE4 Baseline ValueELE5 Baseline ValueELE6 Baseline ValueELE7 Baseline ValueELE8 Baseline ValueELE9 Baseline ValueELE10 Baseline ValueELE11 Baseline ValueELEPROX Baseline ValueMHD RisingNHD Amount RisingNCL RisingFDL RisingMHD FallingNHD Amount Falling

ELE7OVCFELE7ARFF

ELE6ELEPROXELE6ACFF

ELE5ELE4

MPR1214

传感器

飞思卡尔半导体（FreescaleSemiconductor）

表1中.寄存器映射

REGISTER

Fields

RegisterAddress0x310x32

NHDT

NCLTFDLT

MHDPROXRNHDPROXR

NCLPROXRFDLPROXR

MHDPROXFNHDPROXF

NCLPROXFFDLPROXF

NHDPROXT

NCLPROXTFDLPROXTE0TTHE0RTHE1TTHE1RTHE2TTHE2RTHE3TTHE3RTHE4TTHE4RTHE5TTHE5RTHE6TTHE6RTHE7TTHE7RTHE8TTHE8RTHE9TTHE9RTHE10TTHE10RTHE11TTHE11RTHEPROXTTHEPROXRTH

DR

FFI

CDTCL

EL

CDC0CDC1CDC2

SFI

EleEn

CDC

ESIDT

0x330x340x350x360x370x380x390x3A0x3B0x3C0x3D0x3E0x3F0x400x410x420x430x440x450x460x470x480x490x4A0x4B0x4C0x4D0x4E0x4F0x500x510x520x530x540x550x560x570x580x590x5A0x5B0x5C0x5D0x5E0x5F0x600x61

InitialValue0x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x100x040x000x000x000x00

RegisterAddress + 1AutoIncrementAddress

NCL FallingFDL Falling

NHD Amount TouchedNCL TouchedFDL Touched

ELEPROX MHD RisingELEPROX NHD Amount RisingELEPROX NCL RisingELEPROX FDL RisingELEPROX MHD FallingELEPROX NHD Amount FallingELEPROX NCL FallingELEPROX FDL Falling

ELEPROX NHD Amount TouchedELEPROX NCL TouchedELEPROX FDL TouchedELE0 Touch ThresholdELE0 Release ThresholdELE1 Touch ThresholdELE1 Release ThresholdELE2 Touch ThresholdELE2 Release ThresholdELE3 Touch ThresholdELE3 Release ThresholdELE4 Touch ThresholdELE4 Release ThresholdELE5 Touch ThresholdELE5 Release ThresholdELE6 Touch ThresholdELE6 Release ThresholdELE7 Touch ThresholdELE7 Release ThresholdELE8 Touch ThresholdELE8 Release ThresholdELE9 Touch ThresholdELE9 Release ThresholdELE10 Touch ThresholdELE10 Release ThresholdELE11 Touch ThresholdELE11 Release ThresholdELEPROX Touch ThresholdELEPROX Release ThresholdDebounce Touch & ReleaseAFE ConfigurationFilter ConfigurationElectrode ConfigurationELE0 Electrode CurrentELE1 Electrode CurrentELE2 Electrode Current

NCLFFDLF

MPR121

传感器

飞思卡尔半导体（Freescale Semiconductor）

5

表1中.寄存器映射

REGISTER

Fields

RegisterAddress0x62

CDC4CDC5CDC6CDC7CDC8CDC9CDC10CDC11CDCPROX

CDT1CDT3CDT5CDT7CDT9CDT11

CDT0CDT2CDT4CDT6CDT8CDT10CDTPROX

CTL011CTL111DAT11DIR11EN11SET11CLR11TOG11

AFES

SCTS

USLLSLTL

CTL010CTL110DAT10DIR10EN10SET10CLR10TOG10

CTL09CTL19DAT9DIR9EN9SET9CLR9TOG9

RETRY

CTL08CTL18DAT8DIR8EN8SET8CLR8TOG8

CTL07CTL17DAT7DIR7EN7SET77CLR7TOG7

BVA

OORIECTL06CTL16DAT6DIR6EN6SET6CLR6TOG6

CTL05CTL15DAT5DIR5EN5SET5CLR5TOG5AREARFIE

CTL04CTL14DAT4DIR4EN4SET4CLR4TOG4ACEACFIE

0x630x640x650x660x670x680x690x6A0x6B0x6C0x6D0x6E0x6F0x700x710x720x730x7430x750x760x770x780x790x7A0x7B0x7C0x7D0x7E0x7F

InitialValue0x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x000x00

0x00RegisterAddress + 1AutoIncrementAddress

ELE3 Electrode CurrentELE4 Electrode CurrentELE5 Electrode CurrentELE6 Electrode CurrentELE7 Electrode CurrentELE8 Electrode CurrentELE9 Electrode CurrentELE10 Electrode CurrentELE11 Electrode CurrentELEPROX Electrode CurrentELE0, ELE1 Charge TimeELE2, ELE3 Charge TimeELE4, ELE5 Charge TimeELE6, ELE7 Charge TimeELE8, ELE9 Charge TimeELE10, ELE11 Charge TimeELEPROX Charge TimeGPIO Control Register 0GPIO Control Register 1GPIO Data RegisterGPIO Direction RegisterGPIO Enable RegisterGPIO Data Set RegisterGPIO Data Clear RegisterGPIO Data Toggle RegisterAUTO-CONFIG Control Register 0AUTO-CONFIG Control Register 1AUTO-CONFIG USL RegisterAUTO-CONFIG LSL RegisterAUTO-CONFIG Target Level Register

CDC3

MPR1216

传感器

飞思卡尔半导体（FreescaleSemiconductor）

电气特性绝对最大额定值绝对最大额定值为应力额定值只,功能操作的最大值不能保证.应力超出了中指定的限制表2可能会影响器件的可靠性或造成永久性损坏设备.关于功能操作条件,请参阅本节中的其余的表.该器件包含保护电路,防止损坏,由于高静电压或电场,但是,它表示,正常的预防措施,以避免任何电压高于最大额定电压,这个高阻抗电路的应用.表2中.绝对最大额定值 - 电压（相对于V等级电源电压电源电压输入电压符号VDDVREGVINTOiGPIOiGPIOTSSS)值-0.3到+3.6-0.3至+2.75VSS- 0.3到VDD单位VV+ 0.3V°C毫安毫安°CSCL,SDA,IRQ工作温度范围GPIO每引脚的电流源每个引脚的GPIO灌电流存储温度范围-40到+85121.2-40到+125ESD和latch-up保护特性正常处理,应采用预防措施,以避免接触静电放电.资格进行测试,以确保这些设备能够承受的静态到合理的水平,而不受到任何永久性的损伤.在设备的资格进行人体模型（HBM）,机器模型（MM）和电荷设备模型（CDM）ESD应力.被定义为失败,如果暴露于ESD脉冲后,设备不再满足设备规格的设备.完成DC参数和功能测试是按照适用的设备规格在室温下进行,其次是热的温度,除非另有规定的设备规范.表3中. ESD和latch-up测试条件等级人体模型（HBM）机器模型（MM）充电装置模型（CDM）闭锁电流在TA符号VESDVESDVESD值±2000±200±500±100单位VVV毫安= 85°CILATCHMPR121传感器飞思卡尔半导体（Freescale Semiconductor）7直流特性

本节包括对电源的要求和I / O引脚特性的信息.表4中. DC特性

（典型工作电路,

参数

高电源电压低电源电压平均供电电流平均供电电流平均供电电流平均供电电流平均供电电流平均供电电流平均供电电流平均供电电流测量电源电流空闲模式电流输入漏电流ELE_输入电容ELE_输入高电压SDA,SCL输入低电压SDA,SCL输入漏电流SDA,SCL输入电容SDA,SCL输出低电压SDA,IRQ

输出高电压

ELE4 - ELE11（GPIO模式中）

VOLVOHGPIO

IOL= 6mA

VDDi= 2.7 V到3.6 V：VDDi= 2.3 V到2.7 V：VDDi= 1.8 V到2.3 V：

输出低电压

ELE4 - ELE11（GPIO模式中）上电复位

VOLGPIOVTLHVTHL

IOLGPIOD

OHGPIOOHGPIOOHGPIO

VDD和V

REG

= 1.8 V, TA= 25°C,除非另有说明.）

条件

最小2.51.71

RUN1模式@ 1 ms采样周期RUN1模式@ 2 ms采样周期RUN1模式@ 4毫秒的采样周期RUN1模式@ 8毫秒采样周期RUN1模式16 ms采样周期RUN1模式32 ms采样周期RUN1模式@ 64 ms采样周期RUN1模式@ 128 ms采样周期峰值测量占空比

停止模式

典型3.31.8393199102542917118130.025

15最大3.62.75

单位VVμAμAμAμAμAμAμAμA毫安μAμApF的V

0.3 x V

0.025

170.5V

= -10 mA的= -6毫安= -3毫安

0.5

1.080.88

1.351.15

1.621.42

VVV

VDD- 0.5

DD

符号VDDVREGIDDIDDIDDIDDIDDIDDIDDIDDIDDIDDIIH, IILVIHVILIIH, IIL

0.7 x V

DD

VμApF的VV

= 1毫安

VDD升起VDD落下

AC特性

表5中. AC特性

（典型工作电路,

参数

8 MHz内部振荡器1 kHz内部振荡器

VDD和V

REG

= 1.8 V, TA= 25°C,除非另有说明.）符号

fHfL

条件

最小7.440.65

典型81

最大8.561.35

单位兆赫千赫

MPR1218

传感器

飞思卡尔半导体（FreescaleSemiconductor）

I2C AC特性

i表6中.

2C AC特性

（典型工作电路,

VDD和V参数

REG

= 1.8 V, TA= 25°C,除非另有说明.）

符号fSCLtBUFtHD, STAtSU, STAtSU, STOtHD, DATtSU, DATtLOWtHIGHtRtFtF.TXtSPCb

1001.30.7

20+0.1C20+0.1C20+0.1C

25

400

bbb

条件最小典型最大400

单位千赫μsμsμsμs

串行时钟频率

停止和启动条件之间的总线空闲时间保持时间（重复）启动条件重复启动条件建立时间停止条件建立时间数据保持时间数据建立时间SCL时钟低期内的SCL时钟高电平时间

SDA和SCL信号的上升时间,接收下降时间的SDA和SCL信号,接收下降时间SDA发射脉冲宽度穗抑制每条总线的容性负载

1.30.60.60.6

0.9

μsNSμsμs

300300250

NSNSNSNSpF的

MPR121

传感器

飞思卡尔半导体（Freescale Semiconductor）

9

包装尺寸

第1页,共3页

MPR12110

传感器

飞思卡尔半导体（FreescaleSemiconductor）

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