SPD30N08S2-23中文资料

2000-01-13

Page 1

SIPMOS =Power-Transistor

Features

Product Summary

Maximum Ratings ,at T j = 25 °C, unless otherwise specified Parameter

Symbol Value

Unit

Continuous drain current T C = 25 °C,F) T C = 100 °C

I D

2525

A

Pulsed drain current T C = 25 °C

I D puls 120Avalanche energy, single pulse I D = 25 A , V DD = 25 V, R GS = 25 ?

E AS

240mJ Reverse diode d v /d t

I S = 25 A, V DS = 60 , d i /d t = 200 A/μs, T jmax = 175 °C

d v /d t

6

kV/μs

Gate source voltage V GS ±20V Power dissipation T C = 25 °C

P tot 130W Operating and storage temperature T j , T stg

-55...+175°C

IEC climatic category; DIN IEC 68-1

55/175/56

元器件交易网ef463916650e52ea5518980a

2000-01-13

Page 2

Thermal Characteristics Parameter Symbol

Values Unit

min.

typ.

max.

Characteristics

Thermal resistance, junction - case

R thJC -- 1.2K/W

Thermal resistance, junction - ambient, leaded R thJA --100SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1)

R thJA

--

--

7550

Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter

Symbol

Values Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage V GS = 0 V, I D = 1 mA

V (BR)DSS 75--V

Gate threshold voltage, V GS = V DS I D = 80 μA

V GS(th) 2.134Zero gate voltage drain current V DS = 75 V, V GS = 0 V, T j = 25 °C V DS = 75 V, V GS = 0 V, T j = 150 °C

I DSS

--

0.110 1100μA

Gate-source leakage current V GS = 20 V, V DS = 0 V

I GSS -10100nA Drain-source on-state resistance V GS = 10 V, I D = 25 A

R DS(on)

-

tbd

23

m ?

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air.

元器件交易网ef463916650e52ea5518980a

2000-01-13

Page 3

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min.

typ.

max.

Dynamic Characteristics Transconductance

V DS ≥2*I D *R DS(on)max , I D = 30 A g fs

tbd

tbd

-S Input capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C iss

-tbd

tbd

pF

Output capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C oss

-tbd

tbd

Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C rss

-tbd

tbd

Turn-on delay time

V DD = 40 V, V GS = 10 V, I D = 25 A, R G = 7.5 ?t d(on)

-tbd

tbd

ns

Rise time

V DD = 40 V, V GS = 10 V, I D = 25 A, R G = 7.5 ?t r

-tbd

tbd

Turn-off delay time

V DD = 40 V, V GS = 10 V, I D = 25 A, R G = 7.5 ?t d(off)

-tbd

tbd

Fall time

V DD = 40 V, V GS = 10 V, I D = 25 A, R G = 7.5 ?

t f

-tbd

tbd

元器件交易网ef463916650e52ea5518980a

2000-01-13

Page 4

Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter

Symbol

Values Unit

min.

typ.

max.

Gate Charge Characteristics Gate to source charge V DD = 60 V, I D = 25 A Q gs

-tbd

tbd

nC

Gate to drain charge V DD = 60 V, I D = 25 A Q gd

-tbd

tbd

Gate charge total

V DD = 60 V, I D = 25 A, V GS = 0 to 10 V Q g

-tbd

tbd

Gate plateau voltage V DD = 60 V , I D = 25 A

V (plateau)

-tbd

-V

Parameter Symbol

Values Unit

min.

typ.max.Reverse Diode

Inverse diode continuous forward current T C = 25 °C

I S --25A

Inverse diode direct current,pulsed T C = 25 °C

I SM --120Inverse diode forward voltage V GS = 0 V, I F = 25 A V SD -tbd tbd V Reverse recovery time

V R = 40 V, I F =I S , d i F /d t = 100 A/μs t rr -tbd tbd ns Reverse recovery charge

V R = 40 V, I F =l S , d i F /d t = 100 A/μs

Q rr

-

tbd

tbd

nC

元器件交易网ef463916650e52ea5518980a

2000-01-13

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Infineon Technologies AG ,Bereichs Kommunikation St.-Martin-Strasse 53,D-81541 München ? Infineon Technologies AG 1999All Rights Reserved. Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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