IR2183STRPBF;IR21834STRPBF;IR21834PBF;IR2183PBF;IR2183SPBF;
更新时间:2023-04-06 05:22:02 阅读量: 教育文库 文档下载
- IR2183STRPBF推荐度:
- 相关推荐
Features
?Fully operational to +600V
dV/dt immune
????????
Also available LEAD-FREE (PbF)
e1b9bf2233687e21ae45a95e 1
IR2183(4)(S ) & (PbF )
Data Sheet No. PD60173 rev.H
Description
The IR2183(4)(S) are high voltage,
high speed power MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e 3
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15V, V SS = COM, DT= V SS and T A = 25°C unless otherwise specified. The V IL , V IH and I IN
parameters are referenced to V SS /COM and are applicable to the respective input leads: HIN and LIN. The V O , I O and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15V, V SS = COM, C L = 1000 pF, T A = 25°C, DT = VSS unless otherwise specified.
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e
Functional Block Diagrams
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e
5
14-Lead PDIP 14-Lead SOIC
IR21834
IR21834S
Lead Assignments
8-Lead PDIP 8-Lead SOIC
Lead Definitions
Symbol Description
HIN Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2183 and VSS for IR21834)
Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2183and VSS for IR21834)
DT Programmable dead-time lead, referenced to VSS. (IR21834 only)VSS Logic Ground (21834 only)V B High side floating supply HO High side gate driver output V S High side floating supply return V CC Low side and logic fixed supply LO Low side gate driver output COM
Low side return
LIN IR2183
IR2183S
1234
8
765
HIN LIN COM LO
V B HO V S V CC
1234
8
765
HIN LIN COM LO
V B HO V S V CC
1234567
14
1312111098
HIN LIN VSS DT COM LO V CC
V B HO V S
1234567
14
1312111098
HIN LIN VSS DT COM LO V CC
V B HO V S
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
6
e1b9bf2233687e21ae45a95e Figure 1. Input/Output Timing Diagram LIN
HO
LO
HIN
Figure 3. Deadtime Waveform Definitions
DT LO-HO MDT=- DT HO-LO Figure 2. Switching Time Waveform Definitions
LO e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e
7
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e 9
e1b9bf2233687e21ae45a95e/
IR2183(4)(S ) & (PbF
)
e1b9bf2233687e21ae45a95e
e1b9bf2233687e21ae45a95e/
分销商库存信息:
IR
IR2183STRPBF IR21834STRPBF IR21834PBF IR2183PBF IR2183SPBF IR21834SPBF IR21834IR21834STR IR2183S
IR2183IR2183STR
正在阅读:
IR2183STRPBF;IR21834STRPBF;IR21834PBF;IR2183PBF;IR2183SPBF;04-06
天水华天科技生产实习报告04-13
2014新版pep五年级上册unit1read and write05-26
现代教育技术习题09-10-203-11
防渗墙工程施工用表填写要求05-10
13年纳米技术论文05-11
2018人教版高中生物必修一检测第5章第4节第3课时光合作用原理的应用和化能合成作用含答案12-17
教师资格中学教师中学综合素质冲刺练习【26】含答案考点及解析(204-17
氧化铝保护膜失效原因分析及对策03-24
PEP三年级英语上册第一单元测试题含答案09-30
- 1X-ray and Near-IR Variability of the Anomalous X-ray Pulsar
- 2傅里叶变换红外光谱仪(FT-IR)简介001
- 3有关IR2104的自举电容和NMOS选择问题 - 图文
- 4UV to Mid-IR Observations of Star-forming Galaxies at z~2 Stellar Masses and Stellar Popula
- 5IR2110驱动MOS IGBT组成H桥原理与驱动电路分析
- 6红外接收发送模块 W0038HL-26、L5IR4-45(可用于智能电表)
- 7翻译(SUPAC-IR指导原则:速释口服固体制剂:放大生产和批准后变
- 8佳能IR3030N打印A3纸双面打印完了为什么反面字和正面是颠倒的
- 9山东明润工程技术检测有限公司192Ir放射源及γ射线探伤机移 - 图文
- 10山东明润工程技术检测有限公司192Ir放射源及γ射线探伤机移 - 图
- exercise2
- 铅锌矿详查地质设计 - 图文
- 厨余垃圾、餐厨垃圾堆肥系统设计方案
- 陈明珠开题报告
- 化工原理精选例题
- 政府形象宣传册营销案例
- 小学一至三年级语文阅读专项练习题
- 2014.民诉 期末考试 复习题
- 巅峰智业 - 做好顶层设计对建设城市的重要意义
- (三起)冀教版三年级英语上册Unit4 Lesson24练习题及答案
- 2017年实心轮胎现状及发展趋势分析(目录)
- 基于GIS的农用地定级技术研究定稿
- 2017-2022年中国医疗保健市场调查与市场前景预测报告(目录) - 图文
- 作业
- OFDM技术仿真(MATLAB代码) - 图文
- Android工程师笔试题及答案
- 生命密码联合密码
- 空间地上权若干法律问题探究
- 江苏学业水平测试《机械基础》模拟试题
- 选课走班实施方案
- 2183
- STRPBF
- IR
- 21834
- PBF
- SPBF
- 实用的六年级小学作文1300字3篇
- 人教版体育与健康(5-6年级) 教案《韵律活动和舞蹈》
- 高档服装生产线建设项目可行性研究报告项目建议书
- 【股票指标公式下载】-【通达信】薛斯通道组合(主图)
- 精选八年级地理下册8.3新疆维吾尔自治区的地理概况与区域开发导
- 【精品】2022-2022年贵州省贵阳市贵安民族中学八年级(上)期中物
- 六年级上册英语习题课件- 人教精通版 (12)
- 2022-2022学年湖北咸宁嘉鱼城北中学八年级上第一次月考英语试卷(
- 2022年安徽大学中级财务会计(同等学力加试)复试仿真模拟三套题
- 沅陵县职称论文发表网-早期乳腺癌保乳治疗疗效分析论文选题题目
- 欧姆龙温控器E5CC常用设定
- 质量月活动总结报告
- 入党申请书用什么纸什么笔写-
- 高处作业特种作业考试题
- 2022年河南师范大学旅游学院342农业综合知识四之管理
- 新概念第一册全册练习题
- 最难考的银行:建设银行考情解析_如何备考
- 虚云老和尚关于《楞严经》的精要开示
- 河北省鸡泽县第一中学2022届高三上学期第一次月考数学
- 2022年河北师范大学少年儿童组织与思想意识教育教育心理学复试仿