HS7B-2520RH-Q中文资料

元器件交易网

Radiation Hardened Uncompensated,High Slew Rate Operational Ampli er

The HS-2520RH is a radiation hardened monolithicoperational ampli er which delivers an unsurpassed

combination of speci cations for slew rate, bandwidth andsettlingtime.Thisdielectricallyisolatedampli erisdesignedfor closed loop gains of 3 or greater without external

compensation.Inaddition,thishighperformancecomponentalso provides low offset current and high input impedance.The 100V/µs (Min) slew rate and fast settling time of thisampli ermakesitanidealcomponentforpulseampli cationanddataacquisitiondesigns.Toinsurecompliancewithslewrate and transient response speci cations, all devices are100% tested for AC performance characteristics over fulltemperature. This device is a valuable component for RFand video circuitry requiring wideband operation. Foraccurate signal conditioning designs, the HS-2520RH

superiordynamicspeci cationsarecomplementedby25nA(Max) offset current and offset voltage trim capability.Speci cations for Rad Hard QML devices are controlledbytheDefenseSupplyCenterinColumbus(DSCC).TheSMD numbers listed here must be used when ordering.Detailed Electrical Speci cations for these devices arecontained in SMD 5962-95685. A “hot-link” is providedon our homepage for downloading.

/spacedefense/space.asp

Features

Electrically Screened to SMD # 5962-95685 QML Quali ed per MIL-PRF-38535 Requirements High Slew Rate. . . . . . . . . . . .100V/µs Min, 120V/µs (Typ) Wide Power Bandwidth . . . . . . . . . . . . . . . .1.5MHz(Min) Wide Gain Bandwidth . . . . . . .10MHz Min, 20MHz (Typ) High Input Impedance . . . . . . . .50M Min, 100M (Typ) Low Offset Current. . . . . . . . . . . . .25nA Min, 10nA (Typ) Fast Settling (0.1% of 10V Step) . . . . . . . . . .200ns(Typ) Low Quiescent Supply Current. . . . . . . . . . . . .6mA (Max) Gamma Dose. . . . . . . . . . . . . . . . . . . . . .1 x 104RAD(Si)

Applications

Data Acquisition Systems RF Ampli ers Video Ampli ers Signal Generators Pulse Ampli ers

Ordering Information

HS7-2520RH (CERDIP) GDIP1-T8

OR

HS7B-2520RH (SBDIP) CDIP2-T8

TOP VIEW

BAL-IN+INV-

COMPV+OUTBAL

HS2-2520RH (CAN) MACY1-X8

TOP VIEW

IN-

OUT

元器件交易网HS-2520RH Timing WaveformsVIN+ 50 VOUT

-

1.33K 667

50pF

FIGURE 1.

SIMPLIFIED TEST CIRCUIT

+1.67V INPUT INPUT

+67mV

0V

-1.67V+5V 75% OUTPUT 25% -5V T SLEW RATE= V/ T V

0V OVERSHOOT+200mV 90% OUTPUT 10% 0V RISE TIME

-67mV

FIGURE 2. SLEW RATE WAVEFORM

FIGURE 3. TRANSIENT RESPONSE WAVEFORM

NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.

Typical Performance Curves120 100 CURRENT (nA) 80 60 40 20 0 -20 -50 -55 -25 0 25 50

TA= 25oC, VSUPPLY=±15V, Unless Otherwise Speci edVS=±15 EQUIVALENT INPUT NOISE (µV) 100 10K SOURCE RESISTANCE

BIAS CURRENT

10

0 SOURCE RESISTANCE

1.0

OFFSET CURRENT

THERMAL NOISE OF 10K RESISTOR 0.1 100Hz 1kHz 10kHz 100kHz 1MHz

75

100

125

TEMPERATURE (oC)

UPPER 3dB FREQUENCY, LOWER 3dB FREQUENCY (10Hz)

FIGURE 4. INPUT BIAS AND OFFSET CURRENT vs TEMPERATURE

FIGURE 5. EQUIVALENT INPUT NOISE vs BANDWIDTH

元器件交易网HS-2520RH Typical Performance Curves1.3 NORMALIZED PARAMETERS REFFERED TO VALUES AT±25oC OPEN LOOP VOLTAGE GAIN (dB) VS=±15 1.2 1.1 BANDWIDTH 1.0 SLEW RATE 0.9 0.8 0.7 -50 -55 -25 0 25 50 75 100 125 TEMPERATURE (oC) BANDWIDTH SLEW RATE

TA= 25oC, VSUPPLY=±15V, Unless Otherwise Speci ed (Continued)120 100 80 60 40 20 0 -20 10 100 1K 10K 100K 1M 10M 100M FREQUENCY (Hz) GAIN PHASE

FIGURE 6. NORMALIZED AC PARAMETERS vs TEMPERATURE1.1 NORMALIZED PARAMETERS REFERRED TO VALUES AT±15V

FIGURE 7. OPEN-LOOP FREQUENCY AND PHASE RESPONSE120 OPEN LOOP VOLTAGE GAIN (dB) 100 80 60 40 20 0 1000pF -20 300pF 0pF 30pF 100pF

SLEW RATE BANDWIDTH 1.0 SLEW RATE BANDWIDTH

0.9

0.8±10

±15 SUPPLY VOLTAGE

±20

10

100

1K

10K

100K

1M

10

10M

FREQUENCY (Hz)

FIGURE 8. NORMALIZED AC PARAMETERS vs SUPPLY VOLTAGE AT 25oC

FIGURE 9. OPEN-LOOP FREQUENCY RESPONSE FOR VARIOUS VALUES OF CAPACITORS FROM BANDWIDTH CONTROL PIN TO GROUND35

88 87 86 GAIN (dB) 85 84 83 82 -50 -55 -25 0 25 50 75 100 125 TEMPERATURE (oC) VS=±20 VS=±15 VS=±10 PEAK-TO-PEAK VOLTAGE SWING

VS=±20

30 25 20 15 10 5 0 10K 100K 1MEG 10MEG FREQUENCY (Hz) VS=±10 VS=±15

FIGURE 10. OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE

FIGURE 11. OUTPUT VOLTAGE SWING vs FREQUENCY AT 25oC

元器件交易网HS-2520RH Typical Performance Curves4.8 4.6 4.4 4.2 4.0 3.8 3.6 -50 -55 -25 0 25 50 TEMPERATURE (oC) 75 100 125 HORIZONTAL= 100ns/DIV TA= 25oC VS=+15V

TA= 25oC, VSUPPLY=±15V, Unless Otherwise Speci ed (Continued)

RL= 2k CL= 50pF

CURRENT (nA)

VS=±20 VS=±15 VS=±10

UPPER TRACE: INPUT; 1.67V/DIV 10 LOWER TRACE: OUTPUT; 5V/DIV

FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE120 100 POWER SUPPLY REJECTION RATIO (dB) 80 60 40 20 0 100kHz

FIGURE 13. VOLTAGE FOLLOWER PULSE RESPONSE1000 INPUT NOISE VOLTAGE (nV√Hz) 10 INPUT NOISE CURRENT (pA√Hz)

INPUT NOISE CURRENT 100 10

NEGATIVE SUPPLY POSITIVE SUPPLY

INPUT NOISE VOLTAGE 10 1

1 1kHz 10kHz 100kHz 1MHz 1 10 100 1K 10K 100K FREQUENCY (Hz) FREQUENCY (Hz)

0.1

FIGURE 14. POWER SUPPLY REJECTI

ON RATIO vs FREQUENCY

FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY

Suggested VOS AdjustmentV+

20k RT

IN

BAL

OUT

V-

NOTE: Tested offset adjustment range is| VOS+1mV| minimum referred to output. Typical range is+20mV to -18mV with RT= 20k .

元器件交易网HS-2520RH Burn-In CircuitsHS7-2520 CERDIP HS2-2520 METAL CANV+ C3 8 1 2 R1 3 VD2 4 C2 R1 C2 VD2 8 1 V+ C1 C3 3 4 D1 2+ 5 7 C1 D1

+

7 6 5

-

6

NOTES: 1. R1= 1M ,±5%, 1/4W (Min) 2. C1= C2= 0.01µF/Socket (Min) or 0.1µF/Row (Min) 3. C3= 0.01µF (±10%)/Socket 4. D1= D2= 1N4002 or equivalent (per board) 5.|(V+) - (V-)|= 31V

NOTES: 6. R1= 1M ,±5%, 1/4W (Min) 7. C1= C2= 0.01µF/Socket (Min) or 0.1µF/Row (Min) 8. C3= 0.01µF (±10%)/Socket 9. D1= D2= 1N4002 or equivalent (per board) 10.|(V+) - (V-)|= 31V

Irradiation CircuitsIRRADIATION CIRCUIT

C 1 BAL 1M -5% (1/4W MIN) VC 2 -IN 3+IN V2 4 COMP 8 V+ 7 OUT 6 BAL 5 C V1

NOTES: 11. V1=+15V±10% 12. V2= -15V±10% 13. C= 0.1µF±10%

元器件交易网HS-2520RH Schematic DiagramOFFSET OFFSET V+ Q30 R21 200 R2A 200 R2B 200 R20 200 R12 2K Q15 Q3A Q16 R16 960 Q27 BW CONTROL R15 11.13K Q1A+INPUT Q17 Q2A Q21A Q31 Q25 Q26 Q18 Q19 Q20 V-INPUT R3A 1.48K R3B 1.48K R19 1.48K R10 740 R6A 3K R1A 1.68K R1B 1.68K Q24 Q21B Q22 R6B 3K Q5A Q6 Q9 Q5B Q10 Q14 Q1B Q7 Q2B Q4A Q4B Q8 Q3B C1 1pF Q23 Q13B Q11B Q12B Q13A Q11A R18 30 R9 1.1K Q12A R17 30 OUTPUT

R2A 1.8K Q29 Q28 R13 2K R11 4K

R2B 1.8K

元器件交易网HS-2520RH Die CharacteristicsDIE DIMENSIONS: 65 mils x 50 mils x 19 mils (1660µm x 1270µm x 483µm) INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 7kű0.7kÅ Top Metallization: Type: Aluminum Thickness: 16kű2kÅ Substrate: Linear Bipolar, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density:<2 x 105 A/cm2 Transistor Count: 40

Metallization Mask LayoutHS-2520RHV+ OUT BAL

V-

COMP

BAL

-IN

+IN

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certi cation.Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web site

本文来源：https://www.bwwdw.com/article/vvhq.html