1kx4 Static RAM 2114资料

NTE2114

Integrated Circuit

MOS, Static 4K RAM, 300ns

The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon–gate technology. All internal circuits are fully static and therefore require no clocks or refreshing foroperation. The data is read out nondestructively and has the same polarity as the input data. Com-mon input/output pins are provided.

to a data bus.

DAll Inputs and Outputs Directly TTL Compatible

DStatic Operation: No Clocks or Refreshing RequiredDLow Power: 225mW Typ

DHigh Speed: Down to 300ns Access TimeDTRI–STATE Output for Bus interfaceDCommon Data In and Data Out PinsDSingle 5V Supply

DStandard 18–Lead DIP Package

Voltage at Any Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5V to +7VPower Dissipation, PD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1WStorage Temperature Range, Tstg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°CLead Temperature (During Soldering, 10sec), TL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C

(T

= 0° to +70°, V = 5V ±5% unless otherwise specified)

= 0°C to +70°C, V = 5V ±5%, Note 2 unless otherwise specified)

Note 1:Typical values at TA = +25°C.

Note 2:All input transitions ≤ 10ns.Timing referenced to VIL(MAX) or VIH(MIN) for inputs,

0.8V and 2V for output. For test purposes, input levels should swing between0V and 3V. Output load = 1 TTL gate and CL = 100 pF.Note 3:This parameter is guaranteed by periodic testing.

and controls TRI–STATING of the data–and WRITE modes and also controls output TRI–STATING. The truth table details the states pro-During READ–to be enabled and transfer the data to the output pin.

Address access time, tA, is the time required for an address change to produce new data at the output–to–output delay,tCOoutput–WP, refersto this simultaneous low region. Data set–up and hold times are measured with respect to whicheverWRITE.

9

1

10

18 .300 (7.62) .945 (24.0) .260 (6.6)

.160 (4.06) Max

.100 (2.54) .800 (20.32)

.115 (2.92) Min

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