HSMP-3812-BLK中文资料

Surface Mount PIN Diodes Technical Data

Features

?Diodes Optimized for:

Low Current Switching

Low Distortion Attenuating

Ultra-Low Distortion

Switching

Microwave Frequency

Operation

?Surface Mount SOT-23 and SOT-143 Packages

Single and Dual Versions

Tape and Reel Options

Available

?Low Failure in Time (FIT) Rate[1]

Note:

1.For more information see the

Surface Mount PIN Reliability Data Sheet.

HSMP-38XX and

HSMP-48XX Series

Package Lead Code

Identification

required. The HSMP-48XX series

are special products featuring

ultra low parasitic inductance in

the SOT-23 package, specifically

designed for use at frequencies

which are much higher than the

upper limit for conventional

SOT-23 PIN diodes. The

HSMP-4810 diode is a low distor-

tion attenuating PIN designed for

operation to 3 GHz. The

HSMP-4820 diode is ideal for

limiting and low inductance

switching applications up to

1.5GHz. The HSMP-4890 is

optimized for low current switch-

ing applications up to 3 GHz.

The HSMP-386X series of general

purpose PIN diodes are designed

for two classes of applications.

The first is attenuators where

current consumption is the most

important design consideration.

The second application for this

series of diodes is in switches

where low cost is the driving

issue for the designer.

The HSMP-386X series Total

Capacitance (C T) and Total

Resistance (R T) are typical

specifications. For applications

that require guaranteed perfor-

mance, the general purpose

HSMP-383X series is recom-

mended. For low distortion

Description/Applications The HSMP-380X and HSMP-381X series are specifically designed for low distortion attenuator applica-

tions. The HSMP-382X series is optimized for switching applica-tions where ultra-low resistance is required. The HSMP-3880 switch-ing diode is an ultra low distortion device optimized for higher power applications from 50 MHz to

1.5GHz. The HSMP-389X series is optimized for switching applica-tions where low resistance at low current and low capacitance are attenuators, the HSMP-380X or -381X series are recommended. For high performance switching applications, the HSMP-389X series is recommended.

A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime.

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Absolute Maximum Ratings [1] T A = 25°C

Symbol Parameter

Units Absolute Maximum I f Forward Current (1 ms Pulse)Amp 1P t Total Device Dissipation mW [2]250P iv Peak Inverse Voltage —Same as V BR

T j Junction Temperature °C 150T STG

Storage Temperature

°C

-65 to 150

Notes:

1.Operation in excess of any one of these conditions may result in permanent damage to this device.

2.CW Power Dissipation at T LEAD = 25°C. Derate to zero at maximum rated temperature.

PIN Switching Diodes

Electrical Specifications T A = 25°C

Nearest Maximum Equivalent Minimum Maximum Maximum Shunt Mode Part Package Axial Lead Breakdown Series Total Harmonic Number Marking Lead

Part No.Voltage Resistance Capacitance Distortion HSMP-Code [1]

Code Configuration 5082-V BR (V)

R S (?)

C T (pF)

Hmd (dBc)

3820F00Single 3188

50

0.6*

0.8*

—

3822F22Series

3823F33Common Anode 3824F44Common Cathode 3880S00Single

—100 6.50.40–553890G00Single —

100

2.5

0.30**

—

3892G22Series

3893G33Common Anode 3894G44Common Cathode 3895

G5

5

Unconnected Pair

Test Conditions

V R = V BR I F = 5 mA V R = 50 V 2 f o, Z o = 50 W Measure f = 100 MHz f = 1 MHz f o = 400 MHz I R ≤ 10 µA I F = 10 mA*

V R = 20 V*P in = +30 dBm V R = 5 V**

0 V bias

Note:

1.Package marking code is white.

PIN Attenuator Diodes

Electrical Specifications T A = 25°C (Each Diode)

Nearest

Equivalent Minimum Maximum Maximum Minimum Maximum Part Package Axial Lead Breakdown Series Total High Low Number Marking Lead

Part No.Voltage Resistance Capacitance Resistance Resistance HSMP-Code [1]

Code Configuration 5082-V BR (V)R S (?)C T (pF)R H (?)R L (?)

3800D00Single 3080

100

2.0

0.37

1000

8

3802D22Series

3804D44Common Cathode 3810E00Single 3081100 3.00.35150010

3812E22Series

3813E33Common Anode 3814

E4

4

Common Cathode

Test Conditions

V R = V BR I F = 100 mA V R = 50 V I F = 0.01 mA I F = 20 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz f= 100 MHz

I R ≤ 10 µA

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PIN General Purpose Diodes, Electrical Specifications T A = 25°C

Nearest

Equivalent Minimum Maximum Maximum Part Package Axial Lead Breakdown Series Total

Number Marking Lead Part No.Voltage Resistance Capacitance

HSMP-Code[1]Code Configuration5082-V BR (V)R S (?)C T (pF)

3830K00Single3077200 1.50.3

3832K22Series

3833K33Common Anode

3834K44Common Cathode

Test Conditions V R = V BR I F = 100 mA V R = 50 V

Measure f = 100 MHz f = 1 MHz

I R≤ 10 mA

High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes, Electrical Specifications T A = 25°C

Minimum Maximum Typical Maximum Typical

Break-Series Total Total Total Part Package down Resis-Capaci-Capaci-Induc-

Number Marking Lead Config-Voltage tance tance tance tance Appli-

HSMP-Code Code uration V BR (V)R S (?)C T (pF)C T (pF)L T (nH)cation

4810EB B Dual100 3.00.350.4 1.0Attenu-

Cathode ator 4820FA A Dual Anode500.6*0.75* 1.0 1.0*Limiter

4890GA A Dual Anode100 2.5**0.330.375 1.0Switch

V R = V BR I F = 100 mA V R = 50 V V R = 50 V f = 500 MHz –

Measure I F = 10 mA* f = 1 MHz f = 1 MHz 3 GHz

I R≤ 10 µA I F = 5 mA**V R = 20 V*V R = 0 V V R = 20 V*

PIN General Purpose Diodes, Typical Specifications T A = 25°C

Code Minimum Typical Series Typical Total Part Number Marking Lead Breakdown Resistance Capacitance HSMP-Code[1]Code Configuration Voltage V BR (V)R S (?)C T (pF)

3860L00Single50 3.0/1.5*0.20

3862L22Series

3863L33Common Anode

3864L44Common Cathode

Test Conditions V R = V BR I F = 10 mA V R = 50 V

Measure f = 100 MHz f = 1 MHz

I R≤ 10 µA*I F = 100 mA

Typical Parameters at T A = 25°C

Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance HSMP-R S (?)τ (ns)T rr (ns)C T (pF)

380X5518005000.32 @ 50 V

381X7515003000.27 @ 50 V

382X 1.570*70.60 @ 20 V

383X20500800.20 @ 50 V

388X 3.825005500.30 @ 50 V

389X 3.8200*–0.20 @ 5 V Test Conditions I F = 1 mA I F = 50 mA V R = 10 V

f = 100 MHz I R = 250 mA I F = 20 mA

I F = 10 mA*I F = 10 mA*90% Recovery

I R = 6 mA*

Note:

1. Package marking code is white.

4

Typical Parameters at T A = 25°C (unless otherwise noted), Single Diode

Figure 2. RF Capacitance vs. Reverse Bias, HSMP-3830 Series.0.15

0.300.250.200.35

0.400.45

T O T A L C A P A C I T A N C E (p F )

REVERSE VOLTAGE (V)Figure 1. RF Capacitance vs. Reverse Bias, HSMP-3810 Series.Figure 3. Resistance at 25°C vs. Forward Bias Current.

0.15

0.30

0.25

0.20

0.35T O T A L C A P A C I T A N C E (p F )

REVERSE VOLTAGE (V)

R E S I S T A N C E (O H M S )

I F – FORWARD BIAS CURRENT (mA)

0.010.11101000.01

0.1110100

R F R E S I S T A N C E (O H M S )

I F – FORWARD BIAS CURRENT (mA)

R F R E S I S T A N C E (O H M S )

0.010.1110100I F – FORWARD BIAS CURRENT (mA)

Figure 5. RF Resistance vs. Forward Bias Current for HSMP-3810/HSMP-4810.

V R – REVERSE VOLTAGE (V)

C A P A C I T A N C E (p F )

Figure 6. Capacitance vs. Reverse Voltage.

Figure 4. RF Resistance vs. Forward Bias Current for HSMP-3800.

1000

100

10

DIODE RF RESISTANCE (OHMS)

Figure 7. 2nd Harmonic Input Intercept Point vs. Diode RF

Resistance for Attenuator Diodes.I N P U T I N T E R C E P T P O I N T (d B m )

120115

1101051009590

851

10

30

I F – FORWARD BIAS CURRENT (mA)

Figure 8. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes.I N P U T I N T E R C E P T P O I N T (d B m )

FORWARD CURRENT (mA)

Figure 9. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages. HSMP-3820 Series.

T r r – R E V E R S E R E C O V E R Y T I M E (n s )

110

100

10

20

30

V R = 2V V R = 5V

V R = 10V

HSMP-382X

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Typical Parameters (continued)

1000

100

1010

20

30

T r r - R E V E R S E R E C O V E R Y T I M E (n S )

FORWARD CURRENT (mA)

Figure 10. Reverse Recovery Time vs. Forward Current for Various Reverse Voltage. HSMP-3830 Series.

HSMP-3830

V R = 5V

V R = 10V V R = 20V

R E V E R S E R E C O V E R Y T I M E (n S )

FORWARD CURRENT (mA)Figure 11. Typical Reverse Recovery Time vs. Reverse Voltage. HSMP-3880 Series.

10

20

15

25

30

T R R - R E V E R S E R E C O V E R Y T I M E (n S )

FORWARD CURRENT (mA)

Figure 12. Typical Reverse Recovery Time vs. Reverse Voltage. HSMP-3890 Series.

10010

10.1

0.01

I F – F O R W A R D C U R R E N T (m A )

I F – F O R W A R D C U R R E N T (m A )

V F – FORWARD VOLTAGE (mA)Figure 14. Forward Current vs. Forward Voltage. HSMP-3810 and HSMP-4810 Series.

V F – FORWARD VOLTAGE (mA)

Figure 15. Forward Current vs. Forward Voltage. HSMP-3820 and HSMP-4820 Series.

10010

10.1

0.01

I F – F O R W A R D C U R R E N T (m A )

V F – FORWARD VOLTAGE (mA)Figure 16. Forward Current vs.

Forward Voltage. HSMP-3830 Series.0

0.2

0.4

0.6

0.8

1.0

1.2

I F – F O R W A R D C U R R E N T (m A )

V F – FORWARD CURRENT (mA)Figure 17. Forward Current vs.

Forward Voltage. HSMP-3880 Series.

0.2

0.4

0.6

0.8

1.0

1.2

V F – FORWARD VOLTAGE (mA)

Figure 18. Forward Current vs. Forward Voltage. HSMP-3890 and HSMP-4890 Series.

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Typical Parameters (continued)

Figure 19. Typical RF Resistance vs. Forward Bias Current for HSMP-3860.Figure 20. Forward Current vs. Forward Voltage for HSMP-3860.Figure 21. Typical Capacitance vs. Reverse Bias for HSMP-3860.

1000

1R E S I S T A N C E (O H

M S )

BIAS CURRENT (mA)

10

100

I F – F O R W A R D C U R R E N T (m A )

V F – FORWARD VOLTAGE (V)020

0.5

15C T – C A P A C I T A N C E (p F )

V R – REVERSE VOLTAGE (V)

0.2

0.4

1050.10.3

0.12 pF** Measured at -20 V C p 0.08 pF

R j = 12

?

I 0.9C T = C P + C j

I = Forward Bias Current in mA

Equivalent Circuit Model

HSMS-3860

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Typical Applications for Multiple Diode Products

RF COMMON

RF 1RF 1Figure 24. Switch Using Both Positive and Negative Bias

Current.Figure 25. Very High Isolation SPDT Switch, Dual Bias.元器件交易网

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Typical Applications for Multiple Diode Products (continued)

INPUT RF IN/OUT

Figure 26. Four Diode π Attenuator.

Figure 27. High Isolation SPST Switch

(Repeat Cells as Required).

VOLTAGE

BIAS

Figure 28. Power Limiter Using HSMP-3822

Diode Pair.元器件交易网

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Typical Applications for HSMP-48XX Low Inductance Series

Figure 29. Internal Connections.

HSMP-4820 & HSMP-4890

HSMP-48100.5 nH

*0.8pF TYPICAL FOR HSMP-3820Figure 30. Equivalent Circuit.*0.8 pF TYPICAL FOR HSMP-3820Figure 32. Equivalent Circuit.Figure 31. Circuit Layout.

Microstrip Series

Connection for HSMP-48XX Series

In order to take full advantage

of the low inductance of the

HSMP-48XX series when using

them in series application,

both lead 1 and lead 2 should be

connected together, as shown above.元器件交易网

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Microstrip Shunt Connections for HSMP-48XX Series

In the diagram above, the center conductor of the

microstrip line is interrupted and leads 1 and 2 of the

HSMP-38XX series diode are placed across the resulting gap. This forces the 0.5 nH lead inductance of leads 1 and 2 to appear as part of a low pass filter, reducing the shunt parasitic inductance and

increasing the maximum

available attenuation. The 0.3 nH of shunt inductance external to the diode is created by the via holes, and is a good estimate for 0.032" thick material.

Co-Planar Waveguide Shunt Connection for HSMP-48XX Series

Co-Planar waveguide, with ground on the top side of the printed circuit board, is shown

in the diagram above. Since it eliminates the need for via holes to ground, it offers lower shunt parasitic inductance and higher maximum attenuation when

compared to a microstrip circuit.

GROUND BY TWO

VIA HOLES

*0.8 pF TYPICAL FOR HSMP-4820

Figure 34. Equivalent Circuit.

Figure 33. Circuit Layout.*0.8 pF TYPICAL FOR HSMP-4820

Figure 36. Equivalent Circuit.

Figure 35. Circuit Layout.元器件交易网

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Package Dimensions

Outline 23 (SOT-23)

PC Board Footprints

SOT-23

Package Characteristics

Lead Material......................................................................................Alloy 42Lead Finish............................................................................Tin-Lead 85-15%Maximum Soldering Temperature..............................260°C for 5 seconds Minimum Lead Strength..........................................................2 pounds pull Typical Package Inductance ..................................................................2 nH Typical Package Capacitance ..............................0.08 pF (opposite leads)

SOT-143

Outline 143 (SOT-143)

SIDE VIEW

END VIEW

DIMENSIONS ARE IN MILLIMETERS (INCHES)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

PACKAGE MARKING 元器件交易网

/go/rf

For technical assistance or the location of your nearest Hewlett-Packard sales

office, distributor or representative call:Americas/Canada: 1-800-235-0312 or 408-654-8675

Far East/Australasia: Call your local HP sales office.

Japan: (81 3) 3335-8152

Europe: Call your local HP sales office.Data subject to change.

Copyright © 1999 Hewlett-Packard Co.

Obsoletes 5968-3435E

5968-5439E (6/99)

Profile Option Descriptions

-BLK = Bulk

-TR1 = 3K pc. Tape and Reel, Device Orientation; See Figures 37 and 38-TR2 = 10K pc. Tape and Reel, Device Orientation; See Figures 37 and 38Tape and Reeling conforms to Electronic Industries RS-481, “Taping of Surface Mounted Components for Automated Placement.”

Ordering Information

Specify part number followed by option under. For example:

H SMP -38XX -XXX

Bulk or Tape and Reel Option

Part Number

Surface Mount PIN Diode Hewlett-Packard

USER FEED

END VIEW

TOP VIEW Figure 37. Options -TR1, -TR2 for SOT-23 Packages.

Figure 38. Options -TR1, -TR2 for SOT-143 Packages.

END VIEW

TOP VIEW 元器件交易网

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