NMSD200B01-7;中文规格书,Datasheet资料

200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE

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General Description

NMSD200B01 is best suited for switching voltage regulator and power management applications. It

improves efficiency and reliability of DC-DC controllers used in Voltage Regulator Modules (VRM) and can support continuous maximum current of 200mA. It

features an ESD protected discrete N-MOSFET with low on-resistance and a discrete Schottky diode with low forward drop. It reduces component count, consumes less space and minimizes parasitic losses. The

component devices can be used as a part of a circuit or as a stand alone discrete device.

6

5

4

12

3

Features

N-MOSFET with ESD Gate Protection N-MOSFET with Low On-Resistance (RDS(ON)) Low Vf Schottky Diode Low Static, Switching and Conduction Losses Good Dynamic Performance Surface Mount Package Suited for Automated Assembly Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)

Fig 1. SOT-363

Mechanical Data

Case: SOT-363 Case Material: Molded Plastic. "Green Molding"

Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Last Page Weight: 0.006 grams (approximate)

Fig 2. Schematic and Pin Configuration

Device Type Figure

DMN601K_DIE (ESD Protected) Q1 N-MOSFET 2

Maximum Ratings, Total Device @TA = 25°C unless otherwise specified

Characteristic

Power Dissipation (Note 3)

Power Derating Factor above 25 °C Output Current

Symbol Pd Pder Iout

Value Unit 200 mW 1.6 mW/°C

Thermal Characteristics

Characteristic

Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of N-MOSFET)

Notes:

Symbol Tj, Tstg RθJA

Value -55 to +150

625

Unit °C °C/W

1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at /products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at /datasheets/ap02001.pdf.

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Maximum Ratings: @TA = 25°C unless otherwise specified

Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)

Characteristic

Drain Source Voltage

Drain Gate Voltage (RGS <+ 1MOhm) Gate Source Voltage Continuous Pulsed (tp<50 uS)Drain Current (Page 1: Note 3) Continuous (Vgs=10V) Pulsed (tp<10uS, Duty Cycle<1%)Continuous Source Current

Symbol VDSS VDGR VGSS ID IS

Value Unit 60 V 60 V +/-20

V

+/-40 200

mA

800

Value 40

Unit V

Sub-Component Device: Schottky Diode (D1) @TA = 25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Page 1: Note 3)

Non-Repetitive Peak Forward Surge Current @ t<1.0 s

Symbol VRRM VRWM VR VR(RMS) IFM IFSM

28 V

Electrical Characteristics:

ESD Protected N-Channel MOSFET (Q1) @TA = 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage, BVDSS

Zero Gate Voltage Drain Current (Drain Leakage Current) Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse ON CHARACTERISTICS (Note 4)

Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage On-State Drain Current

Static Drain-Source On Resistance

Symbol VBR(DSS) IDSS IGSSF IGSSR VGS(th) VDS(on) ID(on) RDS (on)

60

1 10 -10

V μA μA μA

Test Condition

VGS = 0V, ID = 10μA

VGS = 0V, VDS = 60V VGS = 20V, VDS = 0V VGS = -20 V, VDS = 0V

Forward Transconductance gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Drain-Source (Body) Diode Characteristics and Maximum Ratings Drain-Source Diode Forward On-Voltage VSD Maximum Continuous Drain-Source Diode Forward Current

IS

(Reverse Drain Current)

Maximum Pulsed Drain-Source Diode Forward Current ISM

VDS = VGS=10V, ID = 0.25mA

VDS = VGS = 10V, ID = 1mA

V VGS = 5V, ID = 50mA

V VGS = 10V, ID = 500mA

500 mA VGS = 10V, VDS >=2*VDS(ON)

VGS = 5V, ID= 50mA

Ω

VGS = 10V, ID = 500mA

mS VDS >=2*VDS(ON), ID=200mA

VDS = 25V, VGS = 0V,

f = 1MHz

V VGS = 0V, IS = 300 mA*

Electrical Characteristics: Schottky Barrier Diode (D1) @TA = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 4) Forward Voltage Drop (Note 4) Peak Reverse Current (Note 4) Total Capacitance

Reverse Recovery Time

Symbol V(BR)R VFM IRM CT trr

Test Condition 40 V IR = 10μA

0.37 IF =20mA

V

0.6 IF =200mA 5 μA VR = 30V

28 pF VR = 0V, f = 1.0 MHz 10 ns IF=IR= 200 mA, Irr = 0.1xIR, RL= 100 Ω

Notes: 4. Short duration pulse test used to minimize self-heating effect.

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Typical Characteristics

TA, AMBIENT TEMPERATURE (°C)

Fig. 3, Max Power Dissipation vs. Ambient Temperature

Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Fig. 4 Output Characteristics

VGS, GATE-SOURCE VOLTAGE Fig. 5 Transfer Characteristics

VGS(th),

GATE THRESHOLD VOLTAGE (V)

RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω)

Tch, JUNCTION TEMPERATURE (°C)

Fig. 6 Gate Threshold Voltage vs. Junction Temperature

ID, DRAIN CURRENT (A)

Fig. 7 Static Drain-Source On-Resistance vs. Drain Current

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RD

S(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω)

1

0.1

ID, DRAIN CURRENT (A)

Fig. 8 Static Drain-Source On-Resistance vs. Drain Current

VGS, GATE SOURCE VOLTAGE (V)

Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage

Tj

, JUNCTION TEMPERATURE (°C)

Fig. 10 Static Drain-Source On-State Resistance

vs. Junction Temperature

1

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gF

S, FORWARD TRANSCONDUCTANCE (mS)

IS, REVERSE DRAIN CURRENT (A)

ID

R, REVERSE DRAIN CURRENT (A)

Schottky Barrier Diode – D1 Characteristics

IF, INSTANTANEOUS FORWARD CURRENT (A)

1

1000

0.1

100

10

0.01

0.001

0.0001

200

400

600

800

1000

VF

, INSTANTANEOUS FORWARD VOLTAGE (mV)

Fig. 14 Forward Characteristics30

0.01

5

10

15

20

25

30

35

40

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

Fig. 15 Reverse Characteristics

25CT, TOTAL CAPACITANCE (pF)

20

15

10

5

00

10

20

30

40

VR, REVERSE VOLTAGE (V)

Fig. 16 Total Capacitance vs. Reverse Voltage

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Application Details

ESD Protected N-MOSFET (DMN601K) and Schottky Barrier Diode (SD103AWS) integrated as one in NMSD200B01 can be used as a discrete entity for general applications or part of circuits to function as a low side switch in a Synchronous Rectifier. The N-MOSFET is selected based on the input

voltage range as the maximum duty cycles can be greater than 45%. Schottky diode is selected based on instantaneous Vf (less than 0.75 V) at maximum operation current. The Schottky diode dissipates very little power because it is on for only a small portion of the switching cycle. Normally it shows much lower leakage current and smaller on-resistance (RDS(ON)) even compared to its monolithic counterpart. This device is designed to improve efficiency and reliability of synchronous buck converters used in voltage regulator modules (VRM). The lower Vf of the Schottky diode leads to lower static loss. Every time the high side MOSFET is turned on in the buck converter, the low side Schottky diode is forced to recover the stored charge and there will be lower loss due to the lower Reverse Recovery charge of the Schottky diode.

It is designed to replace a discrete N-MOSFET and a Schottky diode in two separate packages into one small package as shown in Fig. 17. The Schottky diode parallel to the MOSFET body diode is faster and has lower voltage drop compared to the integrated body diode. Overall this device consumes less board space and also helps to minimize conduction or switching losses due to parasitic inductances (e.g. PCB traces) in power supply applications. (Please see Fig. 18 for one example of typical application circuit used in conjunction with DC-DC

converter as a part of power management system and Fig. 19 for low side DC load control.)

DrainCathode

Q1

Gate

D1

SD103AWS

DMN601K

SourceAnode

Fig. 17 Example Circuit Diagram

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HighSide

Q2

ody Diode

VCC

DMN601K

DC-DCControllerand Driver ICS

Low Side

MainInductor

Q1

Load

D1

C1

SD103AWS

DMN601K

B01

Fig. 18 Synchronous Buck Converter with Integrated Schottky Diode

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(Comparator with Hysteresis)

Fig. 19 Low Side DC Load Control

Ordering Information (Note 5)

Shipping 3000/Tape & Reel

Packaging Device Marking Code

SOT-363

Notes:

5. For Packaging Details, go to our website at /datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year Code

SR1

SR1 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006

M = Month, e.g., 9 = September

Fig. 20

2006 T Jan 1

Feb 2

2007 U Mar 3

Apr 4

2008 V May 5

Jun 6

2009

2010

2011

2012

YM

Jul 7

Aug 8

Sep 9

Oct O

Nov N

Dec D

Month Code

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Mechanical Details

SOT-363

Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25

8° 0° α

All Dimensions in mm

Suggested Pad Layout: (Based on IPC-SM-782)

EE

Figure 22

SOT-363*

Dimensions

Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 *Typical dimensions in mm

Z

GC

Y

X

Fig. 22

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.

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