ELMOS E524.03版本 中文版本
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3-WIRE ULTRASONIC TRANSCEIVER DRIVER AND SIGNAL PROCESSOR PRELIMINARY INFORMATION - AUG 01, 2011
E524.03
Features
General Description 集成电路实现了一个单一的收发器超声波测距检测。发射机的信道提供了可编程的功率和频率到一个中心抽头变压器。
接收通道放大μV回波信号并输入到模数转换器。随后的数字滤波,获得了很好的跟踪状态的发送频率没有外部C零部件或微调。结果是回波包络信号。 振荡器的频率,放大器增益和发射功率可调,通过单线的IO引脚,存储在一个嵌入式存储器。
此外,12个可编程阈值/时间设置在IO引脚可用来评估回波包络信号
1高灵敏度,低噪声信号采集(0.5μVRMS)
2驱动电源和信号增益可编程
3支持传感器频率为58khz 48kHz
4全数字信号评估可减少外部元件
5可编程的阈值/时间设定为回声评价
6用于回波信号输出和编程的一个有线接口
7汽车保护高达40V(供应,IO)
8AEC-Q100资格
Applications 1Ultrasonic Park Assist (USPA)
2Industrial Distance Measuring 3Robotics
Ordering Information
Product ID E524.03 Temp. Range -40°C to +85°C Package QFN20L5
Bumper module
US-Transducer
RTD1
C
TD1 R
AIN
RP
R
SUP
D
SUP
VSUP
DRV1
DRV2
CAIN
AINS VDDD
AING
C
VDDD
C
SUP1 C
SUP2
Body Control Unit
E524.03
R
IO_PU
CI
R
IO_S
IO
C
IO2
TDO TCK TDI
C
IO1
TMS
VDDA GNDA GNDD GNDP TMEN
C VDDA
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. ELMOS SEMICONDUCTOR AG DATA SHEET QM-NO.: 25DS0068E.00 1/34
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011 No. Description Condition Symbol 1 Serial resistor in RSUP supply line 2 Reverse polarity DSUP protection diode 3 Blocking capacitor CSUP1 for supply line 4 Blocking capacitor CSUP2 for supply line 5 Filter resistor for >250mW RSUP_TD transducer tank 6 Tank capacitor for CSUP_TD transducer 7 Clamping zener ZD_TD diode to protect DRV1,2 voltages 1) to exceed 40V 8 Serial resistor for RIO_S IO line 9 Pull up resistor for RIO_PU IO line 10 Capacitor for IO CIO1 line 11 Capacitor for IO CIO2 line 12 Filter capacitor for pay CAIN1 transducer signal attention to voltage range 13 Filter resistor for pay RAIN transducer signal attention to power dissipation 14 AC coupling pay CAIN2 capacitor for attention to transducer signal voltage range 15 Blocking capacitor CVDDA for analog supply 16 Blocking capacitor CVDDD for digital supply 17 Transducer RTD resonance resistor 18 Transducer CTD resonance capacitor Min 13 Typ 15 Max 17 Unit Ohm - 1.5 150 73 70 - e.g. BAS321 2.2 220 82 100 e.g.25 2.9 nF nF 300 91 Ohm uF 10 - V 0.9 1 1.1 kOhm kOhm 9 10 11 430 230 330 2.2 pF 1.5 7 2.9 nF 10 13 pF 90 100 110 Ohm 325 470 620 pF 70 100 130 nF nF 70 100 130 adjust to transducer adjust to transducer
Table 1: device values
please see also Fig. 5.2-1
1)
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 2 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011 1 Package and Pinout
5.2 Pin Description
No 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Name nc AINS AING GNDA VDDA DRV1 GNDP DRV2 nc IO VSUP VDDD GNDD TDO TDI TCK nc nc TMS TMEN EDP Type Description not connected to device, should be connected to PCB-GND, as shield Positive signal input Negative signal input Analog ground Internal analog supply voltage Driver output 1 Power ground for driver and IO-Interface Driver output 2 not connected to device, should be connected to PCB-GND, as shield Bidirectional interface Supply Voltage Internal digital supply voltage Digital ground JTAG data output JTAG data input JTAG clock not connected to device, should be connected to PCB-GND not connected to device, should be connected to PCB-GND JTAG select Test mode enable exposed die pad, has to be connected to PCB-GND Table 1.1-1: Pin Description
Explanation of Types:
A = Analog, D = Digital, S = Supply, I = Input, O = Output, B = Bidirectional, HV = High Voltage
1.
设备组装在一个qfn20l4包根据JEDEC标准mo-220,K的问题,
六月2006。参考JEDEC的变体是vggd-5。
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 3 / 34 Qm-No.: 25DS0068E.00 Package Reference
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.3 Package Pinout
20 TMEN
19 TMS
18 17 16 TCK TDI 15 TDO 14 GNDD 13 VDDD 12 VSUP 11
1 nc 2 AINS 3 AING 4 GNDA 5 VDDA
nc nc 21 EDP
DRV1 6
GN
DP DRV2 nc 7 8 9
IO
10
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 4 / 34 Qm-No.: 25DS0068E.00 Fig. 1.3-1: Package Pinout for QFN20L4 (top view)
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5 Functional Description
5.1 Supply and Bias
Bumper module
E524.03
VDDD regulator
VDDD
C
GNDD
VDDD
VDDA regulator
GND
VDDA
C
GNDA
VDDA
BIAS generator Supply and Bias
GND
Fig. 5.1-1: block diagram of supply and bias
该块的功能是:
芯片内部模拟电源的产生
芯片内部数字部分的生成
芯片内部使用的参考和偏置电流的产生
同时,模拟电源VDDA以及数字电源VDDD,需要外部电容器
cvdda和cvddd。建议把外部电容尽量靠近相关引脚vddx和gndx。
VDDA和VDDD不能供应任何外部元件。
万一VDDA VDDD短路或接地,输出电流将被限制在ivdda,短暂的分别
ivddd,短。
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 11 / 34 Qm-No.: 25DS0068E.00
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011 threshold exponent threshold value without offset and typical voltage [mV] scaling 0 0 0 1 5 8.1 2 10 16.1 3 15 24.2 4 21 33.9 5 28 45.2 6 35 56.5 7 42 67.7 8 50 80.6 9 59 95.2 10 68 109.7 11 78 125.8 12 89 143.5 13 101 162.9 14 113 182.3 15 127 204.8 16 141 227.4 17 157 253.2 18 174 280.6 19 192 309.7 20 212 341.9 21 233 375.8 22 256 412.9 23 280 451.6 24 307 495.2 25 335 540.3 26 366 590.3 27 399 643.5 28 434 700.0 29 472 761.3 30 514 829.0 31 558 900.0 Table 5.3.3.1-3: Threshold values resulting from exponent and typical voltage
INITIAL VALUE, bit THRES_INI
在发送模式的初始阈值指数总是设置为31的最大值。
在接收模式下,初始阈值指数点thres_ini定义。在接收模式的初始 THRES_INI 0 1 function in receive mode 初始阈值指数= 31 初始阈值指数= thres1
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 17 / 34 Qm-No.: 25DS0068E.00 Table 5.3.3.1-4: function of bit THRES_INI
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
End of SEND and RECEIVE mode, THRES7 - THRES14 如果选择短距离,发送和接收模式结束后间隔14。
如果长时间范围内发送和接收的方式结束最早的区间7和最新的后第十四区间后,根据设定值thres7-thres14。
如果价值thresn,N = 8-14,设置为最大值,高于前值阈值(N— 1)、发送和接收模式结束后间隔N-1,别的后间隔14。 长范围的例子: thres11 = 6
thres12 = 31(最大值)
?发送或接收模式结束后间隔11。
SCALING in RECEIVE mode, bits THRES_SCALE[1:0]
在接收模式的阈值灵敏度可以增加一个缩放因子。所有的阈值定义的thres1 - thres14与缩放因子乘以。缩放因子是由乙组它的
thres_scale [1:0]按表5.3.3.1-5。 THRES_SCALE[1] 0 0 1 1 THRES_SCALE[0] 0 1 0 1 SCALING_FACTOR 0.25 0.5 0.75 1.0 Table 5.3.3.1-5: Scaling for Receive Threshold
备注:本scaling_factor在发送模式不能被修改,scaling_factor总是1
阈值偏移,位thres_len
发送模式中的比较器的阈值是插值阈值函数和一个附加偏移值的总和。 这个偏移值是:
62短距离 31长距离
Summarized:
用于插值算法的阈值的计算如下:
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 18 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
Threshold value for noise measurement
Constant threshold value
during interval 0
max
Linear interpolation
Threshold value
SEND or RECEIVE request
Interval 0 Interval 1 Interval 2 Interval 3 Interval Inter4 val 5 Interval 6 Interval 7 Interval 8 Interval 9 Interval 10 Interval 11 Interval 12 Interval 13 Inter
val 14
time
Start of SEND or RECEIVE mode
End of SEND or RECEIVE mode
offset
Fig. 5.3.3.1-1: intervals of SEND or RECEIVE mode and related threshold values
example 1:
短距离,发送请求,thresn编程15
example 2:
长距离、接收请求,scaling_factor = 0.75,thresn编程7
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 19 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.3.3.2 NOISE measurement during SEND and RECEIVE command
随着环境噪声的增加可能会干扰发送或接收模式的测量,在进入发送或接收模式时,该集成电路直接测量环境噪声的噪声。环境噪声测量公司是在发送或接收命令的低相位期间进行(tsnd / TREC)。数字滤波器的输出进行比较,从控制单元通过比较阈值转子。
阈值可以根据表位5.3.3.2-1的noise_cfg [1:0]选择。 NOISE_CFG[1] 0 NOISE_CFG[0] 0 0 1 1 1 0 1 threshold value 在先前发送或接收模式结束时的阈值, 但scaling_factor固定为1 62 124 620 Table 5.3.3.2-1: 噪声测量取决于比特noise_cfg [1:0]阈值
用输入输出命令“读取状态”,可以读取噪声信息。
“电源后的第一噪声测量的阈值值为1023。噪声测量的结果是由状态寄存器输出。
5.4
比较器的输出可以被屏蔽的时间tcmask数字滤波的阈值低于比较器输出信号后。如果集成电路是操作的智慧,这个功能可能是有用的高增益和低比较器阈值。在这种组合中,即使是低噪声耦合从输入输出线到模拟输入电路,例如,变压器可以引起附加的回波信号。
掩蔽可以启用比特comp_mask按表5.3.3.3-1。 COMP_MASK 0 1 function 比较器掩蔽不活跃 比较器掩模 Masking of comparator output
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 20 / 34 Qm-No.: 25DS0068E.00
Table 5.3.3.3-1: function of bit COMP_MASK
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.2 IO Interface
Body control unit
Bumper module
VSUP_LINE
RSUP
E524.03
CONTROL
DSUP
VSUP
RXD
RIO_PU_BCU
CSUP1 CSUP2
TXD
GND_LINE
RIO_PU
IO_INTERFACE
Debouncing
IO_LINE RIO_S
IO
CIO2
C_IO_BCU
CIO1
GNDP
Fig. 5.4-1: block diagram IO interface
IO接口管理控制单元之间的通信缓冲器(BCU)和保险杠模块。数据通过输入输出线传输。
Exchange of commands, register- and EEPROM data
为了将数据发送到缓冲器模块,输入输出电压必须由缓冲器控制单元进行调制。在IC引脚IO下面vio_il电压会检测到低水平,以上六电压o_ih高水平。输入有去抖电路抑制干扰信号较短的原因。
数据是通过调节下拉电流ipd_io进销IO从保险杠模块传送到BCU。ipd_io拉下来的IO线在外部电压上拉电阻rio_pu和rio_pu_bcu。为了减少EMI电流ipd_io调节线IO实现一个下降沿的srvio电压摆率,作为新兴的边缘是由外部电路定义他目前只能调节以保证摆率小于srvio。
Echo reporting
在发送和接收模式下,输入输出接口输出检测到的回波信号。一个有效的回波信号(见5.3.3.1节)的报道与低水平只要滤波器输出信号超过实际阈值劳工。
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 21 / 34 Qm-No.: 25DS0068E.00
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
Diagnosis report in SEND mode
该集成电路提供了机会,以测试正确的连接的换能器。输入发送模式后,变频器驱动程序被激活。这会导致高信号在放大器的输入和通信parator将检测“回波”。正确连接传感器与变压器连接将继续释放一定的时间振荡,即使传感器驱动程序已经失活。因此,变频器/变压器组合释放时间为换能器连接指示图5.4.1-1。
Bit Encoding
在输入输出线路上发送或接收一个逻辑“1”或“0”的序列显示如下图:
5.3.3.3
T
BIT0
1
T
BIT1
T
BIT
T
BIT
Fig. 5.4-2: Bit Encoding
Commands
该器件提供以下状态命令从ECU的IO应用传播:
发送请求
收到请求
阈值编程
阅读状态
EE写 读
EE编程
测量配置
驱动频率校准
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 22 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
9.
Send Request
这个命令是用来发送一个突发。当设备在接收模式下,该设备处于阈值范围的100%。下面的图表显示发送请求的示例。
threshold
signal line
t
IO
T
SND
T
TX
Echo Reporting
IO line controlled by host IO line controlled by sensor
Fig. 5.4.1-1: Send Request
5.5
作为一个纯粹的接收单元,而不触发超声波换能器是由一个总线信号引发。回波检测阈值可以被编程为25%,50%,75%或100%全打旧的范围。
threshold
Receive Request
IO line controlled by host IO line controlled by sensor
signal line
t
IO
TREC
Echo Reporting
Fig. 5.4.2-1: Receive Request
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 23 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.3.2 Threshold programming
与此命令的阈值和阈值缩放的几个控制位写入设备: Bit 0-4 5-9 10-14 15-19 20-24 25-29 30-34 35-39 40-44 45-49 50-54 55-59 60-64 65-69 70-71 72 73 74 75 76 77 78 no. of bits 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 1 1 1 1 1 1 1 Function Name Default (bin) 1st threshold value THRES1 31 2nd threshold value THRES2 31 3rd threshold value THRES3 31 4th threshold value THRES4 30 5th threshold value THRES5 29 6th threshold value THRES6 28 7th threshold value THRES7 27 8th threshold value THRES8 25 9th threshold value THRES9 22 10th threshold value THRES10 14 11th threshold value THRES11 10 12th threshold value THRES12 6 13th threshold value THRES13 0 14th threshold value THRES14 0 Scaling for receive TRES_SCALE[1: 2 operation 0] Initial threshold value THRES_INI 0 Length of measurement THRES_LEN 0 cycle even parity bit for bit 73-58 PARITY0 - even parity bit for bit 57-42 PARITY1 - even parity bit for bit 41-26 PARITY2 - even parity bit for bit 25-10 PARITY3 - even_parity bit for bit 9-0 PARITY4 - Table 5.4.3-1: Write threshold command
第一位传送的IO线是thres1 MSB(位0),最后一位是校验位78(比特0?奇偶校验9)。
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 24 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
IO
TCMD TD 0 0 0 1
command
threshold values + parity bits
IO line controlled by host
IO line controlled by sensor
Fig. 5.4.3-1: Write threshold command
5.3.3 Read Status
命令“读取状态”可用于验证阈值的最后传输,并获取最新发送/接收请求的噪声级信息。噪音分析在发送/接收请求命令的输入输出线的低相位期间。
这两者的含义如下: first bit 0 1 meaning 最后的数据接收不正确,默认的数据活动 最后的数据接收成功,发送数据活动 second bit Table 5.4.4-1: Read Status: First Bit
0 1 meaning 在上一个测量周期中没有检测到噪声 在最后测量周期中检测到的噪声
Table 5.4.4-2: Read Status: Second Bit
IO
TCMD TD 0 0 1 0
command 2 bit
status
IO line controlled by host IO line controlled by sensor Fig. 5.4.4-1: Read status command
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 25 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
5.3
PRELIMINARY INFORMATION - AUG 01, 2011
EE-Write
振荡器的调整值,放大器增益和超声波水平也可以通过双向接口传递。在系统的最后一次功能测试中,值可以是看,调整并存储在EEPROM。所有的EEPROM位的功能如下表所示: Bit 0 1 2-3 4 5-11 12-15 16-19 no. of bits 1 1 2 1 7 4 4
Name SPARE_BIT IOMASK NOISE_CFG FILTADJUST F_DRV_ADJ DRV_CUR AMP_GAIN Function Default (dec) EEPROM bit 0 without internal functionality, can be used for customer specific data disable change on 0 IO after rising edge on IO noise strategy 3 adjustment of filter 0 bandwidth driver frequency calibrated to fDRV = adjustment 48 kHz transducer current 8 adjustment amplifier gain 8 adjustment Table 5.4.5-1: EE-Programming
如果“写EEPROM数据”被选中的数据位直接命令后位。发送的数据位改写EEPROM数据来测试新的
EEPROM的值。
第一位传送的IO线是零位的最高点(点0),最后一位是amp_gain LSB(位19)。
IO
TCMD TD 0 1 0 1
command EEPROM data
IO line controlled by host
IO line controlled by sensor
Fig. 5.4.5-1: Write EEPROM data command
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 26 / 34 Qm-No.: 25DS0068E.00
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.6 EMC
11.
电磁发射和抗扰度测试在150kHz的频率范围与典型应用1GHz。
Emission is validated according: 5.7 IEC 61967 - 4 ( conducted : 150Ω-Methode ) 5.8 IEC 61967 - 2 ( radiated : GTEM-Methode ) Susceptibility is validated according:
Chip Level
5.9 IEC 62132 - 4 ( conducted : DPI-Methode ) 5.10 IEC 62132 - 2 ( radiated : GTEM-Methode )
Immunity against Transients is validated
on the SUP_LINE according to ISO 7637-1, ISO 7637-2 on the IO_LINE according to ISO 7637-1, ISO 7637-3
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 32 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
center aligned Signature 52403 YWW * # A XXX P Explanation ELMOS project number Year and week of assembly Mask revision code ELMOS internal code ELMOS project revision code Production lot number Assembler code 7 Marking
5.3.4 Top Side
ELMOS 52403 YWW*# AXXXP Table 7.1-1: Top Side marking of device E524.03
Table 7.1-2: Explanation of marking signatures of device E524.03
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 33 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
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Contact Information
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ELMOS Semiconductor AG
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+492317549100
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Am Geflügelhof 12 ? 85716 Unterschlei?heim/Eching
: sales@elmos.de : www.elmos.de
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Sales Office France
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? ELMOS Semiconductor AG, 2011. Reproduction, in part or whole, without the prior written consent of ELMOS Semiconductor AG, is prohibited.
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 34 / 34 Qm-No.: 25DS0068E.00
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.3.3.4 EE-Read
“读取EEPROM”命令加载到寄存器和EEPROM内容传送的
输入输出线。EEPROM的内容将提供三次:第一次使用的EEPROM单元的标称读取电压,二水平较低,读取电压和第三次高水平阅读沃尔特通用电气。给用户一个提示,是否已正确编程EEPROM单元。另外一个状态位被发送。状态位是位EEPROM,所以它也发送三时代。此位是一个编程电压比较器的输出,该电压比较器在编程过程中观察到编程电压。一个高电平意味着编程电压一直在同正确的范围内,低水平表明,编程是不正确的。
第一位传送的IO线是零位的最高点(0位表你写的)其次是1到19,额外的20位编程电压状态位—。这个序列是代表吃了两倍以上。
IO
TCMD TD 0 1 0 0
IO line controlled by host
IO line controlled by sensor
Fig. 5.4.6-1: Read EEPROM data command
command
EEPROM data
5.5
当选择功能”程序的EEPROM,EEPROM数据位将被当前的寄存器的内容程序。整个过程必须由一个tprog等待时间结束。在这一次,针的IO电压必须设置在tvprog vprog。否则,EEPROM不会编程。
EE-Programming
V
PROG
IO
TT0110 T
CMD_PROG
D
VPROG
T
PROG
command
IO line controlled by host IO line controlled by sensor
Fig. 5.4.7-1: Program EEPROM command
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 27 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
10.
为了实现一种改进的短距离传感器的增益和突发长度的能力可以减少。下表显示了不同的命令,用于配置的长度和减少: gain reduction / GRED default configuration Command (bin) number of burst- pulses / NBURST 1 1 0 0 8 OFF 1 1 0 1 16 OFF 1 1 1 0 8 ON 1 1 1 1 16 ON Table 5.4.8-1: Measurement Configuration
Measurement Configuration
IO
TCMD TD 1 1 X X
IO line controlled by host
IO line controlled by sensor
Fig. 5.4.8-1: Configure Measurement command
command config
5.6
Driver Frequency Calibration
对内部振荡器所需的频率脉冲宽度八定义Tcal每个可以驱动IO线。下图显示流: IO
T
T001
D
CMD_PROG
1 TT
D
CAL
T T T T T T T T T T T T T T T
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
CAL
command
IO line controlled by host
IO line controlled by sensor
Fig. 5.4.9-1: Oscillator Calibration Pulse
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 28 / 34 Qm-No.: 25DS0068E.00 3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.3.3 JTAG Interface for lab analysis
访问测试和调试的IC 4线JTAG接口结构的应用。JTAG接口可以通过访问引脚TMS,TCK,TDI和TDO当TMEN引脚设置为一。TMEn引脚设置为泽RO重置所有测试和调试结构,芯片工作在正常模式。JTAG不会重置内部上电复位(POR)。
5.3.4 JTAG Instruction Register
指令寄存器(IR)是8位的最低有效位(LSB)将在第一。每个教学点被从TDI的IC在TCK的上升沿。图5.5.1-1显示HOw负荷指令到JTAG IR寄存器。看到一个完整的用于访问测试寄存器JTAG指令表5.5.3-1。
Fig. 5.5.1-1: Instruction Register Access
?
一个20位数据寄存器(DR)的JTAG接口实现。数据字移,最高有效位(MSB)首先,在IC的TDI输入。每一位被从TDI在TCK的上升沿。在同时,TDO移出最后捕获/储值在解决数据寄存器。一个新的点是在一个下降沿的TCK测试。图5.5.2-1:数据寄存器的访问显示了如何加载n位字为JTAG博士和读取存储的值通过TDO。
Fig. 5.5.2-1: Data Register Access
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 29 / 34 Qm-No.: 25DS0068E.00 JTAG Data Register
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
5.3.4 JTAG Instruction Summary
instruction name IR_READ_ENV IR_READ_THRES IR_READ_ENVTHRES value / hex 0xD0 0xD1 0xD2 description read current envelope value read current threshold value read current envelope and threshold value
Table 5.5.3-1: JTAG Instructions
5.3.3.2 JTAG Instruction \
在转移指令”ir_read_env”到JTAG指令寄存器IC将返回接收链的当前结果(输出滤波器)在TDO输出。在TDI输入的数据忽略。输出值是10位宽和读取的最大频率ftck = 2 MHz。
?
在转移指令”ir_read_thres”到JTAG指令寄存器的ASIC将返回在TDO输出比较器输入电流阈值水平。在TDI输入数据是Ig不可忽视。输出值是10位宽和读取的最大频率ftck = 2 MHz。
JTAG Instruction \
5.5.6 JTAG Instruction \
在教学“ir_read_envthres”转移到JTAG指令寄存器IC将返回接收链的当前结果(输出滤波器)和电流阈值水平在Comparator TDO输出输入。在TDI输入数据被忽略。输出值是20位宽和读取的最大频率ftck = 2 MHz。前10位的接收信道的传输设置启动MSB后跟10位比较器阈值。
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 30 / 34 Qm-No.: 25DS0068E.00
3-Wire Ultrasonic Transceiver Driver and Signal Processor E524.03
PRELIMINARY INFORMATION - AUG 01, 2011
6 ESD, Latchup and EMC
5.4 Electro Static Discharge (ESD)
AEC-Q100-002 Human Body Model 100pF 1,5 kΩ +/- 4 kV for leads VSUP,IO +/- 2 kV for all other leads <10 ns pin to supply 1 of each polarity Standard Model Capacitance Resistance Voltage Pulse rise time (10%-90%) Test point Number of pulses Table 6.1-1: ESD on IC Level, Human Body Model (HBM)
Standard Model Resistance Voltage Pulse rise time (10%-90%) Test point Number of pulses
AEC-Q100-011 Charged Device Model 1 Ω +/- 750 V for corner leads +/- 500 V for all other leads <400 ps pin to supply 3 of each polarity Table 6.1-2: ESD on IC Level, Charged Device Model (CDM)
5.3.3.5
Latch-up
闭锁性能是根据JEDEC标准JESD 78修订验证有效。
This document contains information on a product under development. ELMOS Semiconductor AG reserves the right to change or discontinue this product without notice. ELMOS Semiconductor AG Data Sheet 31 / 34 Qm-No.: 25DS0068E.00
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