电子元器件RCR1512SI简介

N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。

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N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。

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N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。

RCR1512SI

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Typical Performance Characteristics

N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。

CR1R52S1I4/5

tthp://ww.junwyiic.-ocm

N沟道增强模式场效应晶体管特点VDS (五) = 60伏 编号= 0.24 低RDS(ON )的高密度的单元设计。电压控制小信号开关。坚固和可靠的。高饱和电流的能力。

RCR1512SI

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