ES-CEBLV10Z 晶元 10X20 芯片规格书

更新时间:2023-05-23 06:08:01 阅读量: 实用文档 文档下载

说明:文章内容仅供预览,部分内容可能不全。下载后的文档,内容与下面显示的完全一致。下载之前请确认下面内容是否您想要的,是否完整无缺。

ES-CEBLV10ZInGaN Venus Blue LED Chip> Mechanical Specification:(1) Dimension - Chip size: 10 mil x 20 mil (260 ± 25 µm x 500 ± 25 µm) - Thickness: 3.9 mil (100 ± 10 µm) - P bonding pad: 2.8 mil (70 ± 10 µm) - N bonding pad: 2.8 mil (70 ± 10 µm) (2) Metallization - Topside P electrode: Au alloy - Topside N electrode: Au alloy Features: High radiant flux 100% probing test Passivation layer on top Long operation life Applications: Lighting Backlighting Mobile appliances Consumer electronicPN> Electro-optical Characteristics at 25°C: (1) °Parameter Symbol Vf1 Forward Voltage Vf2 Reverse Current Dominant Wavelength Spectra Half-width(2)Condition If = 10µA If = 20mA Vr = 5V If = 20mA If = 20mA P23Min. 2.0 2.8 455 24.5Typ. 25 -Max. 3.8 2.0 465 26.0Unit V V μA nm nmIr λd ΔλRadiant Flux(3)(4)Po P24If = 20mA 26.0 27.5mWNote: (1) ESD protection during chip handling is recommended. (2) Basically, the wavelength span is 10nm; however, customers’ special requirements are also welcome. (3) Radiant flux is determined by using an Ag-plated TO-can header without an encapsulant. (4) Radiant flux measurement allows a tolerance of ±15%.COPYRIGHT ©2012 Epistar Corporation. All Rights Reserved.

ES-CEBLV10Z InGaN Venus Blue LED Chip> Absolute Maximum Ratings:Parameter Forward DC Current Reverse Voltage Junction Temperature Symbol If Vr Tj Condition Ta = 25 C Ta = 25 C Rating ≤ 30 ≤5 ≤ 115 -40 ~ +85 5 ~ 35 -20 ~ +65 280(<10sec) Unit mA V C C C C CChip Chip-on-tape/storage Chip-on-tape/transportationStorage TemperatureTstgTemperature during Packaging--Note: Maximum ratings are package dependent. The above maximum ratings were determined using a Printed Circuit Board (PCB) without an encapsulant. Stresses in excess of the absolute maximum ratings such as forward current and junction temperature may cause damage to the LED.> Characteristic Curves:Fig.1 – Relative luminous Intensity vs. Forward Current Fig.2 – Forward Current vs. Forward VoltageFig.3 – Relative Intensity (@20mA) vs. Ambient TemperatureFig.4 – Forward Voltage (@20mA) vs. Ambient TemperatureFig.5 – Dominant Wavelength (@20mA) vs. Ambient TemperatureFig.6 – Maximum Driving Forward DC Current vs. Ambient o Temperature (De-rating based on Tj max. = 115 C)COPYRIGHT ©2012 Epistar Corporation. All Rights Reserved.

本文来源:https://www.bwwdw.com/article/a3h4.html

Top