MZK400TS60U中文资料

MZC400TS60U

PRELIMINARY MZK400TS60U

Fast Recovery Epitaxial Diode INT-A -PAK Ultra-Fast TM Speed FRED

Features

·International standard package

With DBC ceramic base plate MZC MZK

·Planar passivated chips V RRM = 600V ·Short recovery time I FAVM = 400A ·Low switching losses t rr = 250ns ·Ultra-soft recovery behaviour ·Industry standard package ·

UL recongnition pending

Benefits

·

Antiparallel diode for high frequency switching devices ·Increased operating efficiency ·Direct mounting to heatsink ·Uninterruptible power supplies (UPS)·Ultrasonic cleaners and welders ·Low voltage peaks for reduced protection circuits

Absolute Maximum Ratings

Symbol

Test Conditions Max.

Units

V RSM & V RRM 600 V I FRMS T C =75 o C

560 A I FAVM T C =75 o C; rectangular, d=0.5

400 A I FRM t p <10µs; rep. rating, pulse width limited by T VJM 2185 A I FSM

T VJ =45 o C; t=10ms (50 Hz),sine 3300 A t=8.3ms (60 Hz),sine 3600 A T VJ =150 o C; t=10ms (50 Hz),sine 2880 A t=8.3ms (60 Hz),sine

3180 A I 2t

T VJ =45 o C; t=10ms (50 Hz),sine 38400 A 2s t=8.3ms (60 Hz),sine 39100 A 2s T VJ =150 o C; t=10ms (50 Hz),sine 31100 A 2s t=8.3ms (60 Hz),sine

31800 A 2s V ISOL RMS Isolation Voltage, Any T erminal T o Case, t=1 min 2500 V P D T C =25 o C

1008 W

T J Operating Junction T emperature Range -40 to +150 o

C

T STG

Storage T emperature Range

-40 to +125

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MZC400TS60U MZK400TS60U

Termal / Mechanical Characteristics

Parameter

Typ.

Max.

Units

R θJS T ermal Resistance, Junction-to- Sink DC -0.202 R θJC T ermal Resistance, Junction-to- Case DC -0.122 o C/W

R θCS

T ermal Resistance, Csar-to- Sink- Module 0.08 -Mouting T orque, Case-to-Heatsink - 4.0 N.m Mouting T orque, Case-to-T erminal 1,2 & 3 - 3.0Weight of Module

200

-

g

Electrical Characteristics (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V RRM Reverse Breakdown Voltage 600 - - V

I R =16mA

I R

Diode Leaking Current

- -16mA T VJ =25 o C V R =V RRM -

- 5mA T VJ =25 o C V R =0.8V RRM -

-100mA T VJ =125 o C V R =0.8V RRM V F Diode Forward Voltage - - 1.17V I F =230A; T VJ =125 o C - - 1.36V T VJ = 25 o C - - 1.41V I F =400A; T VJ =125 o C -

- 1.52V T VJ = 25 o C

V TO For power-loss calculations only - -0.85V r 6

-

- 1.14m ? trr@T VJ =100 o C

Diode Reverse Recovery Time

-250300ns IF=400A I RM @T VJ = 25 o C Diode Peak Reverse Current - -66A VR=300V I RM @T VJ =100 o C Diode Peak Reverse Current

-

-

110

A

-di/dt=600A/µs

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