IRFP250中文资料

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IRFP250

N-CHANNEL 200V - 0.073 - 33A TO-247

PowerMesh II MOSFET

TYPEIRFP250

sssss

VDSS200V

RDS(on)< 0.085

ID33 A

TYPICAL RDS(on) = 0.073

EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH II is the evolution of the firstgeneration of MESH OVERLAY . The layout re-finements introduced greatly improve the Ron*areafigure of merit while keeping the device at the lead-ing edge for what concerns swithing speed, gatecharge and ruggedness.

APPLICATIONS

sHIGH CURRENT, HIGH SPEED SWITCHINGsUNINTERRUPTIBLE POWER SUPPLIES (UPS)sDC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

SymbolVDSVDGRVGSIDIDIDM (q)PTOTdv/dt(1)TstgTj

Parameter

Drain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 k )Gate- source Voltage

Drain Current (continuos) at TC = 25°CDrain Current (continuos) at TC = 100°CDrain Current (pulsed)Total Dissipation at TC = 25°C

Derating Factor

Peak Diode Recovery voltage slopeStorage Temperature

Max. Operating Junction Temperature

Value200200±2033201321801.445–65 to 150

150

(1)ISD ≤33A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

UnitVVVA

AAWW/°CV/ns°C°C

( )Pulse width limited by safe operating area

Sep 20001/8

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IRFP250

THERMAL DATA

Rthj-caseRthj-ambRthc-sink

Tl

Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

0.66300.1300

°C/W°C/W°C/W°C

AVALANCHE CHARACTERISTICS

SymbolIAREAS

Parameter

Avalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

33600

UnitAmJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF

SymbolV(BR)DSSIDSSIGSS

Parameter

Drain-source

Breakdown VoltageZero Gate Voltage

Drain Current (VGS = 0)Gate-body LeakageCurrent (VDS = 0)

Test Conditions

ID = 250 µA, VGS = 0VDS = Max Rating

VDS = Max Rating, TC = 125 °CVGS = ±30V

Min.200

150±100

Typ.

Max.

UnitVµAµAnA

ON (1)

SymbolVGS(th)RDS(on)ID(on)

Parameter

Gate Threshold VoltageStatic Drain-source On Resistance

On State Drain Current

Test Conditions

VDS = VGS, ID = 250 µAVGS = 10V, ID = 16AVDS > ID(on) x RDS(on)max, VGS=10V

33Min.2

Typ.30.073

Max.40.085

UnitV A

DYNAMIC

Symbolgfs CissCossCrss

Parameter

Forward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,ID= 16A

VDS = 25V, f = 1 MHz, VGS = 0

Min.10

Typ.252850420120

Max.

UnitSpFpFpF

2/8

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ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON

Symboltd(on)trQgQgsQgd

Parameter

Turn-on Delay Time Rise TimeTotal Gate ChargeGate-Source ChargeGate-Drain Charge

Test Conditions

VDD = 100V, ID =16 A RG=4.7 , VGS = 10V(see test circuit, Figure 3)VDD = 160V, ID = 33 A,VGS = 10V, RG=4.7

Min.

Typ.25501171550

158Max.

UnitnsnsnCnCnC

SWITCHING OFF

Symboltr(Voff)tftc

Fall TimeCross-over Time

Parameter

Off-voltage Rise Time

Test Conditions

VDD = 160V, ID = 16 A, RG=4.7 , VGS = 10V(see test circuit, Figure 5)

Min.

Typ.6040100

Max.

Unitnsnsns

SOURCE DRAIN DIODE

SymbolISDISDM (2)VSD (1)trrQrrIRRM

Parameter

Source-drain CurrentSource-drain Current (pulsed)Forward On VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery Current

ISD = 33 A, VGS = 0ISD = 33 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C(see test circuit, Figure 5)

3705.429

Test Conditions

Min.

Typ.

Max.331321.6

UnitAAVnsµCA

Note:1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

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Normalized On Resistance vs Temperature

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IRFP250

Fig. 1:

Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: And Diode Recovery Times

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